2010
DOI: 10.1117/1.3509368
|View full text |Cite
|
Sign up to set email alerts
|

Electron leakage and its suppression via deep-well structures in 4.5- to 5.0-μm-emitting quantum cascade lasers

Abstract: The equations for threshold-current density J th and external differential quantum efficiency η d of quantum cascade lasers (QCLs) are modified to include electron leakage and the electron-backfilling term corrected to take into account hot electrons in the injector. We show that by introducing both deep quantum wells and tall barriers in the active regions of 4.8-μm-emitting QCLs, and by tapering the conduction-band edge of both injector and extractor regions, one can significantly reduce electron leakage. Th… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
10
0

Year Published

2010
2010
2015
2015

Publication Types

Select...
7
1

Relationship

2
6

Authors

Journals

citations
Cited by 25 publications
(14 citation statements)
references
References 32 publications
(74 reference statements)
0
10
0
Order By: Relevance
“…This is a known problem in mid-infrared (MIR) QCLs, 3 which frequently employ extremely tall conduction band barriers as a solution. [3][4][5] Inspired by the successes in MIR QCLs, we report here results on a GaAs/Al 0.15 Ga 0.85 As THz QCL in which some barriers are selectively replaced with pure AlAs to suppress parasitic leakages.…”
mentioning
confidence: 99%
“…This is a known problem in mid-infrared (MIR) QCLs, 3 which frequently employ extremely tall conduction band barriers as a solution. [3][4][5] Inspired by the successes in MIR QCLs, we report here results on a GaAs/Al 0.15 Ga 0.85 As THz QCL in which some barriers are selectively replaced with pure AlAs to suppress parasitic leakages.…”
mentioning
confidence: 99%
“…3 With the DW design E 54 was increased from ~ 46 meV in conventional QCLs to 60 meV. 3,15 With a linear-taper TA DW design the E 54 value can be increased to 84 meV ( Fig. 1) for reasons that will become evident from the analysis below.…”
Section: The Tapered-active Region Conceptmentioning
confidence: 98%
“…Level 4 represents the upper-next level to level 3, and level 5 represents the bottom of the upper miniband (um) continuum state. As has been pointed out, 19,20 leakage currents through the upper miniband and thermal backfilling current from the ground state g to level 2 will deteriorate the performance of QC lasers. Therefore, in this model we also include leakage currents from levels 3 and 4 to the upper-miniband continuum, and from level 4 to levels 1 and 2, as indicated by the arrows in Fig. 2.…”
Section: Modelmentioning
confidence: 99%
“…Tables I and II list various calculated LO-phonon scattering times at 0 K and at 300 K, respectively. For the calculation of temperature-dependent LO-phonon scattering times, the following two fundamental relationships have been used: [18][19][20] …”
Section: A Transition Efficiencymentioning
confidence: 99%