Intersubband optical absorption coefficients and refractive index changes in a V‐groove quantum wire

Abstract

In this paper, the intersubband optical absorption coefficients and the refractive index changes are studied in a V-groove quantum wire. We use analytical expressions for these properties obtained by the compact-density matrix formalism. In this regard, the linear, nonlinear and total intersubband absorption coefficients and refractive index changes are investigated as a function of the bend width wire (b), the incident optical intensity (I), and the angle u. According to the results obtained from the present work, it is deduced that: (i) The linear terms in the refractive index changes and absorption coefficients dose not change with incident optical intensity whereas nonlinear terms depend on incident optical intensity; (ii) The total refractive index changes and the absorption coefficients reduce as the incident optical intensity increases; (iii) The total absorption coefficient and refractive index changes increase and also shift toward higher energies as the bend width wire increases; and (iv) The total refractive index changes and absorption coefficients shift toward higher energies as the angle u increases.

Linear and nonlinear susceptibilities in GaN/Al x Ga1−x N quantum wire

“…As can be seen from the figure, the augmentation of H is followed on the one hand by a remarkable decrease in the amplitude of susceptibility and in the other hand by a significant shift of the peaks towards the low frequencies. The magnitude of Realχ (3) (ω) is 10 −12 m 2 V −2 . This can be attributed to quantum confinement effect [41].…”

“…The impact of quantum wire height H on real (Realχ (3) (ω)) part of third order nonlinear susceptibility has been illustrated as a function of pump photon energy w  (eV) for a given Aluminum mole fraction x=40% in figure 5. As can be seen from the figure, the augmentation of H is followed on the one hand by a remarkable decrease in the amplitude of susceptibility and in the other hand by a significant shift of the peaks towards the low frequencies.…”

“…Over the last two decades, physical properties of quantum wells, quantum wires and quantum dots have attracted the interest of theoretical and experimental investigations [1][2][3][4][5][6][7][8]. These nanostructures exhibit new electronic and optical properties offering a wide range of potential applications in optoelectronic devices, photodetectors [9,10], far-infrared laser amplifiers [11,12], light emitting diodes [13,14] and solar cells [15].…”

Spin–orbit interaction effects on the optical properties of quantum wires under the influence of in-plane magnetic fields

“…During the last two decades, physical properties of low-dimensional semiconductor structures such as quantum wells, quantum wires, quantum dots have attracted the attention of theoretical and experimental researchers because of their potential application in laser and optical modulation technology [1][2][3][4][5][6]. In these structures, quantum confinement of charge carriers leads to the formation of space quantized energy levels [7][8][9].…”

Quantum Wire with Triangle Cross Section: Optical Properties

“…To obtain information about the optical properties of low-dimensional systems, the reader can refer to Refs. [24][25][26][27].…”