Intersubband absorption in strained AlxGa1−xN/GaN quantum wells with InyGa1−yN nanogroove layers

Zhu, Jun; S, Ban; Ha, S. H.

doi:10.1016/j.spmi.2012.01.010

Cited by 12 publications

(5 citation statements)

References 30 publications

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“…The shape of an IOA is mainly determined by the integral part. It is helpful for us to recalculate IOA based on equation (11). With the same parameters as used in figure 2, the corresponding results are shown in figure 3.…”

Section: Results and Analysesmentioning

confidence: 99%

“…On the other hand, InGaAs has a much smaller band gap than AlGaAs, so that the epitaxy growing of an InGaAs layer in the well layer of a AlGaAs/GaAs SQW may generate a shallow nanogroove. Zhu et al [11] found that the InGaN groove layer can give rise to more localized wavefunctions. Pokatilov et al [12] designed a QW structure with a nanogroove in the well to improve the electron mobility.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nanogroove control of intersubband absorption in AlGaAs/GaAs step quantum wells

Liu¹,

Cheng²,

He³

2016

Semicond. Sci. Technol.

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In this work, the intersubband absorption between the ground and the top subbands is numerically studied in a three-level AlGaAs/GaAs step quantum well (SQW) structure with an InGaAs nanogroove layer. The calculations show that the intersubband optical absorptions can be tuned easily by varying the parameters of the nanogroove layer, such as the position, thickness and indium concentration. Of these, the indium concentration of the InGaAs nanogroove layer is found to be the best parameter because the tunable range is easy to control and the corresponding peak values are kept with relatively small difference. Compared with conventional SQWs, a SQW with a nanogroove layer has the advantage of improving absorption strength. This study is focused on the intersubband absorptions in the energy range of 0.112∼0.133 eV, therefore the corresponding results are useful to the optimization of optically pumped terahertz lasers with CO 2 lasers as the pumping sources.

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Section: Results and Analysesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nanogroove control of intersubband absorption in AlGaAs/GaAs step quantum wells

Liu¹,

Cheng²,

He³

2016

Semicond. Sci. Technol.

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“…In 2012, J. Zhu et al investigated the intersubband absorption in strained Al x Ga 1−x N/GaN QWs with In y Ga 1−y N nanogroove layers. Their results indicate that the position and height of absorption peaks are sensitive to the structural parameters such as In composition, nanogroove thickness and the strain induced by the groove layer [13]. The intense laser field effects on the linear and nonlinear intersubband optical properties in a strained InGaN/GaN QW have been studied by M.J. Karimi and H. Nafaei [14].…”

Section: Introductionmentioning

confidence: 99%

The nonlinear optical rectification and second harmonic generation in asymmetrical Gaussian potential quantum well: Effects of hydrostatic pressure, temperature and magnetic field

et al. 2016

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In the present work, the effects of hydrostatic pressure, temperature, and magnetic field on the nonlinear optical rectification (OR) and second-harmonic generation (SHG) in asymmetrical Gaussian potential quantum well (QW) have been investigated theoretically. Here, the expressions for the optical properties are calculated by the compact-density-matrix approach and iterative method. Simultaneously, the energy eigenvalues and their corresponding eigenfunctions have been obtained by using the finite difference method. The energy eigenvalues and the shape of the confined potential are modulated by the hydrostatic pressure, temperature, and magnetic field. So the results of a number of numerical experiments indicate that the nonlinear OR and SHG strongly depends on the hydrostatic pressure, temperature, and magnetic field. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons.

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“…These polarization fields can produce a strong internal built-in electric field (in order of MV/cm) which plays a very important role in electronic and optical properties of wurtzite GaN-based QWs. Within this context, a great deal of efforts has been devoted to investigate the electronic and optical properties of the strained nitride semiconductor quantum heterostructures [5][6][7][8][9][10][11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%