Interstitial copper-related center in n-type silicon

Istratov, A. A.; Hieslmair, H.; Flink, C.; Heiser, T.; Weber, E. R.

doi:10.1063/1.120026

Cited by 69 publications

(56 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In other words, it has 'negative-U' and V +1 Si is energetically unstable. Only three levels are observed for substitutional copper Cu Si , corresponding to charge states +1, 0, −1, and −2 [5][6][7][8][9][10]. There is no experimental information about the defect's symmetry at present.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure calculations for substitutional copper and monovacancies in silicon

et al. 2006

View full text Add to dashboard Cite

Two different computer program packages based on the self-consistent local-spin-density approximation- and -are employed in this study of substitutional copper Cu Si and monovacancies V Si in silicon, including the effects of their charge state. The programs differ in the types of basis sets and pseudopotentials they use, each with their own relative merits, while being similar in overall quality. This approach aims to reduce uncertainty in the results, particularly for small or subtle effects, where the risk is greatest that the conclusions are affected by artifacts specific to a particular implementation. The electronic structures of the two defects are closely related, hence they are expected to behave in a similar manner. For both defects structural distortions resulting in lower point group symmetries than T d (the highest possible) are found. This is in good agreement with the results of previous studies of V Si . Much less is known about symmetry-lowering effects for Cu Si ; however, the electronic levels of Cu Si have been measured accurately, while those for V Si are less accessible. Calculating them is a challenging task for theory. The strategy we adopt, based purely on comparing total energies of supercells in different charge states, with and without model defects, reproduces the three known levels for Cu Si reasonably well. Satisfactory results are also obtained for V Si , so far as can be judged for this more complex case.

show abstract

Section: Introductionmentioning

confidence: 99%

Electronic structure calculations for substitutional copper and monovacancies in silicon

et al. 2006

View full text Add to dashboard Cite

show abstract

“…The electrical levels of various copper related defects are known from experiment. [2][3][4][5][6][7] Analysis and interpretation of the observations is assisted by the fact that related impurities and their complexes with hydrogen such as zinc, 8 silver, 9 gold, 10,11 platinum, 12 and palladium 13 have defect induced levels of similar character. According to Watkins, the electrical levels of substitutional transition metals are derived from those of the silicon monovacancy V Si ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

Passivation of copper in silicon by hydrogen

et al. 2005

View full text Add to dashboard Cite

The structures and energies of model defects consisting of copper and hydrogen in silicon are calculated using the AIMPRO local-spin-density functional method. For isolated copper atoms, the lowest energy location is at the interstitial site with T d symmetry. Substitutional copper atoms are found to adopt a configuration with D 2d symmetry. We conclude that the symmetry is lowered from T d due to the Jahn-Teller effect. Interstitial hydrogen atoms are found to bind strongly to substitutional copper atoms with an energy that is more than the difference in formation energy over the interstitial site for Cu. The resulting complex has C 2v symmetry in the −2 charge state where the H atom is situated about 1.54 Å away from the Cu atom in a ͓100͔ direction. In other charge states the symmetry of the defect is lowered to C s or C 1 . A second hydrogen atom can bind to this complex with nearly the same energy as the first. Two structures are found for copper dihydride complexes that have nearly equal energies; one with C 2 symmetry, and the other with C s symmetry. The binding energy for a third hydrogen atom is slightly more than for the first. Calculated electronic levels for the model defects relative to one another are found to be in fair to good agreement with experimental data, except for the copper-dihydride complex. The copper trihydride complex has no deep levels in the bandgap, according to our calculations.

show abstract

“…Such small magnitude of the copper-related DLTS peak situated around 90 K [19] would not be detected on the background of the main DLTS-peak located around 110 K. The reason for the small amplitude of the broad maximum around 190 K related to Cu precipitates could be, as for Ni, the small ratio of Cu precipitate volume that hit inside the space charge region of schottky-diode.…”

Section: Discussionmentioning

confidence: 71%

“…According to the results of [19] the concentration of DLTS-signal due to interstitial Cu in n-Si www.pss-c.com…”

Section: Discussionmentioning

confidence: 97%

Combined XBIC/μ‐XRF/μ‐XAS/DLTS investigation of chemical character and electrical properties of Cu and Ni precipitates in silicon

Trushin

Vyvenko

Seifert

et al. 2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

The accumulation of amyloid‐β (Aβ) as amyloid fibril deposits may play a central role in the pathogenesis of Alzheimer's disease, which is among the most common diseases of the 21st century. E. Gazit and co‐workers describe in their Communication on a novel Aβ fibrilization inhibitor, whose mechanism of action is based on targeting aromatic recognition modules together with a unique Cα‐methylation β‐breakage strategy. We thank Tal Mazor for the graphical assistance with the cover.

show abstract

Interstitial copper-related center in n-type silicon

Cited by 69 publications

References 11 publications

Electronic structure calculations for substitutional copper and monovacancies in silicon

Electronic structure calculations for substitutional copper and monovacancies in silicon

Passivation of copper in silicon by hydrogen

Combined XBIC/μ‐XRF/μ‐XAS/DLTS investigation of chemical character and electrical properties of Cu and Ni precipitates in silicon

Contact Info

Product

Resources

About