Intersegment resistance in silicon p—n-Junction position-sensitive detectors

Technological and Electrophysical Characteristics of Receiving Detectors Based on SI(Li), SI (Au) Structures With Scintilator Semiconductor

“…Based on the widely used diffusion and drift methods of introducing selected input atoms into the main part of the crystal, it is necessary to improve these technological processes and distribute the input atoms homogeneously in the crystal volume. [2] LITERATURE ANALYSIS AND METHODS Preparation and development of semiconductor Si(Li) p-i-n structural detectors in many leading scienti c centers and higher educational institutions, including the Petersburg Institute of Nuclear Physics (Russia), the Joint Institute of Nuclear Research of the Russian Federation (Russia), the United Institute of Nuclear Research (Dubna, Russia), the Institute of Scienti c Testing of Microdevices of the National Academy of Sciences of Ukraine (Ukraine), Tomsk State University (Tomsk), National University of Kazakhstan named after Al-Farabi, (Kazakhstan), Institute of Physics and Technology (Uzbekistan). Fabrication of semiconductor detectors for recording nuclear radiation is complex and consists of mechanical, chemical and temperature operations and structural designs.…”

Technological and Electrophysical Characteristics of Receiving Detectors Based on Si (Ge), Si (Li) and Si (Au) Structures With Scintilator Semiconductor

“…Based on the widely used diffusion and drift methods of introducing selected input atoms into the main part of the crystal, it is necessary to improve these technological processes and distribute the input atoms homogeneously in the crystal volume. [2] The fabrication of semiconductor detectors for recording nuclear radiation is complex and consists of mechanical, chemical and temperature operations and structural designs. Each of them has its own task and requires precise control.…”