Interrelations between technology for obtaining quantum dots and optoelectronic properties of semiconductors [Invited]

Abstract

The mechanism and kinetics of growth of nanocrystals considered as quantum dots (those used as electronic blocks in optoelectronic devices) is investigated for the case when the growth and solving of them is controlled in parallel by diffusion (surface of volume) and by the rate of chemical reaction at surface of the nanocrystals (Wagner's mechanism of growth). It is shown that the total flow to and from the nanocrystal consists of two parts, viz. the diffusion and kinetic ones. Depending on the ratio x of the two parts of the total flow, the diffusion or Wagner's mechanism of growth predominates. For that, the size distribution function is determined for the specified x either by the curve corresponding to the generalized Chakraverty-Wagner distribution or from the generalized Lifshitz-Slyozov-Wagner distribution. Comparison of theoretically computed distributions with the experimentally obtained histograms is carried out.