Synthesis and characterization of silicon nanorod on n-type porous silicon

Abstract

This work reports a new method for growing semiconductor nanorods on a porous silicon substrate. After preparation of n-type porous silicon samples, a thin layer of gold was deposited on them. Gold deposited samples were annealed at different temperatures. The structural, thermal, and optical properties of the samples were studied using a field emission scanning electron microscope (FESEM), photoacoustic spectroscopy, and photoluminescence spectroscopy, respectively. FESEM analysis revealed that silicon nanorods of different sizes grew on the annealed samples. Thermal behavior of the samples was studied using photoacoustic spectroscopy. Photoluminescence spectroscopy showed that the emission peaks were degraded by gold deposition and attenuated for all samples by annealing.

Thermal Characteristics of PVA-PANI-ZnS Nanocomposite Film Synthesized by Gamma Irradiation Method

“…Thermal properties of samples were characterized by the photoacoustic spectroscopy (PAS) method. [15] Using this optical setup, the TDs of films were measured and investigated for different irradiation doses. We have reported the synthesis and morphological characterization of PVA-PANI-ZnS nanocomposite films in our previous work.…”

“…Photoacoustic spectroscopy (PAS) is used to determine the thermal diffusivity (TD) of nanocomposite films by the same method as mentioned in previous work. [15] The TD variation as a function of irradiation dose is plotted in Fig. 4 for five different films.…”