2007
DOI: 10.1016/j.intermet.2007.04.015
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Interpretation of the morphology and crystallography of precipitate γ1-Ti4Nb3Al9 in L10-TiAl(Nb)-based intermetallics by invariant line theory

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Cited by 14 publications
(2 citation statements)
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“…In the field of solid phase transformation, several approaches have been made to predict the crystallographic features, including orientation relationship (OR), habit plane (HP), and growth direction (GD), attempting to interpret the growth morphology of the secondary phases. These representative models include the theory of invariant line [19,[23][24][25][26][27][28], O-lattice theory [28][29][30], edge-to-edge matching (E2EM) model [31][32][33], structural ledges [34][35][36], overlapping reciprocal intensity model [37,38] and invariant deformation element (IDE) model [39,40]. Among these models, the IDE model based on the invariant line theory is considered to be a relatively simplified model as only one-step rotation is needed during the calculation.…”
Section: Introductionmentioning
confidence: 99%
“…In the field of solid phase transformation, several approaches have been made to predict the crystallographic features, including orientation relationship (OR), habit plane (HP), and growth direction (GD), attempting to interpret the growth morphology of the secondary phases. These representative models include the theory of invariant line [19,[23][24][25][26][27][28], O-lattice theory [28][29][30], edge-to-edge matching (E2EM) model [31][32][33], structural ledges [34][35][36], overlapping reciprocal intensity model [37,38] and invariant deformation element (IDE) model [39,40]. Among these models, the IDE model based on the invariant line theory is considered to be a relatively simplified model as only one-step rotation is needed during the calculation.…”
Section: Introductionmentioning
confidence: 99%
“…Magnesium silicide (Mg 2 Si), having a face-centered-cubic CaF 2 type of structure, has been identified for a promising advanced thermoelectric materials in the temperature range from 500K to 800 K[1~4], because of their advantages of an environmental-friendly material, such as the abundance of its constituent elements in the earth's crust and the non-toxicity of its processing by-products [5,6].However, the phase purity and microstructure of the product Mg 2 Si are difficult to control by conventional melting processes such as ingot metallurgy (IM) because of the easy volatilization and oxidation of Mg and the great discrepancy of melting point between Mg and Si. Here to fore, many preparation methods have been developed to produce Mg 2 Si and improve its thermoelectric properties, such as vacuum melting [4], solid state reaction [7], mechanical alloying [8][9][10] and spark plasma sintering (SPS) [3,11], which are quite time consuming and complex. However, the above issues have not solved radically yet.…”
Section: Introductionmentioning
confidence: 99%