1977
DOI: 10.1016/0025-5416(77)90198-7
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Interpretation of High-temperature creep of SiC by deformation mapping techniques

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Cited by 29 publications
(4 citation statements)
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“…Diffusional creep in polycrystalline SiC occurs by diffusion of carbon 22 or silicon 23 at grain boundaries 22,23 or within grains, 24 or by diffusion of impurities at grain boundaries 25 . There is a very limited amount of data on diffusion of carbon and silicon elements in SiC.…”
Section: Resultsmentioning
confidence: 99%
“…Diffusional creep in polycrystalline SiC occurs by diffusion of carbon 22 or silicon 23 at grain boundaries 22,23 or within grains, 24 or by diffusion of impurities at grain boundaries 25 . There is a very limited amount of data on diffusion of carbon and silicon elements in SiC.…”
Section: Resultsmentioning
confidence: 99%
“…The creep of ␣-SiC with the grain size of 65 m was studied by Krishnamachari and Notis. 11 They attributed the deformation (n ϭ 0.9, Q d ϭ 147 kJ/mol) to Coble creep which occurred by grain-boundary diffusion.…”
Section: Introductionmentioning
confidence: 99%
“…Diffusional creep in polycrystalline SiC occurs by diffusion of carbon [21] or silicon [22] at grain boundaries or within grains [23] or by diffusion of impurities at grain boundaries [24]. Activation energies for diffusion of carbon and silicium within grains in β -SiC made via chemical vapour deposition have been estimated to be 840 [25] and 910 kJ mol −1 [26], respectively.…”
Section: Generalitiesmentioning
confidence: 99%