Interpolating semiconductor alloy parameters: Application to quaternary III–V band gaps

Donati, Giovanni; Kaspi, R.; Malloy, K.J.

doi:10.1063/1.1613371

Cited by 64 publications

(37 citation statements)

References 25 publications

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“…Gain parameters used in calculations were estimated from their values for binaries given in [11,15,16] using interpolation formulas (14) and (15) and bowing parameters taken from [11,15]. Only two exceptions from this procedure were introduced in order to give better agreement with experimental results in the case of GaInNAs energy gap and electron effective mass.…”

Section: Comparative Analysis Of Gaas-and Gasb-based Active Regions Ementioning

confidence: 99%

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Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

Piskorski¹,

Frasunkiewicz²,

Sarzała³

2015

Bulletin of the Polish Academy of Sciences Technical Sciences

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Abstract. In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 µm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 µm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and -2%, respectively.

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Section: Comparative Analysis Of Gaas-and Gasb-based Active Regions Ementioning

confidence: 99%

“…To calculate the above parameters for active region materials (A x B 1−x C y D 1−y or A x B y C z D) the nonlinear interpolation schemes [14] using the binary values B [15,16] for III-V materials and bowing parameters C [15] have been used:…”

Section: Comparative Analysis Of Gaas-and Gasb-based Active Regions Ementioning

confidence: 99%

Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

Piskorski¹,

Frasunkiewicz²,

Sarzała³

2015

Bulletin of the Polish Academy of Sciences Technical Sciences

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“…This is because, examination of multivariable interpolation formulae shows that all these approaches to III-V quaternary alloy interpolation are arbitrary due to an undetermined multiquadratic term [18].Therefore, a rational approach was developed by Donati to model the compositional dependence of quaternary alloy bandgap using standard multivariable quadratic interpolation [19], in which the biquadratic relationship between quaternary bandgap and binaries can be compacted into a product whose 3x3 matrix includes the alloy parameters. The formula becomes…”

Section: Design Of the Quantum Wellsmentioning

confidence: 99%

Design of a LW-VCSEL Optical Source

Syed¹,

Hassan²

2014

IJAREEIE

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ABSTRACT:There are a number of reasons why light can be used as an efficient carrier of information. As a result, optical communication has gained much importance over the last few decades. The vertical cavity surface emitting laser (VCSEL) is a low cost light source with attractive performance characteristics such as low power consumption, high speed capabilities at low currents, and a circular output beam. These features have madeVCSEL an established component in digital communication networks as the optical source. In this paper, a 1550nm intra-cavity structure Vertical Cavity Surface Emitting Laser (VCSEL) has been designed using quarter nary compound material of AlGaIn Asin both QW and barrier, but with different compositions, and InP as the substrate. Lattice matching has been obtained in the layers from the substrate upto the top contact layer except the quantum well(QW) layers where small amount of compressive strain of 1.6% has been used. AlGaAsSb/AlAsSb has been used as the DBR material for achieving lattice matching with the substrate, and also for achieving higher refractive index contrast. The active material compositions have been chosen to obtain a peak gain at 1550 nm. The out come of this design is a top emitting VCSEL based on In P substrate using a different structure which is capable of producing 1550 nm light output and which can be constructed easily using widely used epitaxial techniques mixed with the MBE using digital alloy technique for the QW layers. The designed VCSEL is successfully simulated as an optical source, with an error free transmission of 70 km through a single mode optical fiber.The finalstructure of the VCSELis alsosuitablefor useinopticalICs.

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“…Data for binary materials and ternary alloys used in these calculations were taken from review [19]. The quaternary alloy band gaps were calculated using biquadratic interpolation algorithm [20]. Fig.…”

Section: Modelingmentioning

confidence: 99%

Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

Chen

Donetsky

Shterengas

et al. 2008

IEEE J. Quantum Electron.

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Abstract-InGaAsSb/AlGaAsSb quantum well (QW) diode laser structures with either 1% or 1.5% compressively strained QWs were grown on GaSb substrates by molecular beam epitaxy. Widestripe lasers fabricated from structures of both types have roomtemperature operating wavelengths near 2.3 microns. The roomtemperature threshold current density of 1-mm-long uncoated devices with 1.5% strained QWs was lower than threshold current density of the 1.0% strained QW devices by nearly a factor of two (120 A/cm 2 versus 230 A/cm 2 ). Experiment shows that the reduction in threshold current density with increasing QW strain is related to the increase in differential gain and decrease in transparency current density. Optical gain calculations prove that improvement of the QW hole confinement reduces the threshold carrier concentration in laser structures with heavily strained low arsenic content quantum wells.Index Terms-Mid-infrared, GaSb-based, type-I, high power, heavy compressive strain, differential gain, hole confinement.

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Interpolating semiconductor alloy parameters: Application to quaternary III–V band gaps

Cited by 64 publications

References 25 publications

Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

Design of a LW-VCSEL Optical Source

Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

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