Interplay of surface morphology, strain relief, and surface stress during surfactant mediated epitaxy of Ge on Si

Zahl, Percy; Kury, P.; Hoegen, M. Horn von

doi:10.1007/s003390051445

Cited by 31 publications

(16 citation statements)

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“…Relief of large interfacial stresses can take place in different ways. [31] For instance, pseudomorphic growth [32] of Ge on Si, with the lattice constant of Si leads to strong compressive stress. The film relieves strain by forming a rough surface on a nanometer scale which allows partial elastic relaxation toward the Ge bulk lattice constant.…”

Section: Discussion On Interface Formationmentioning

confidence: 99%

Characterization of silver selenide thin films grown on Cr‐covered Si substrates

Mohanty

Malar

Osipowicz

et al. 2008

Surface & Interface Analysis

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Thermal stability of silver selenide thin films formed from the solid-state reaction of Ag-Se diffusion couples on Si substrates covered with a thin Cr film, is investigated. Glancing angle X-ray diffraction (GXRD), XPS, atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) are used to characterize the as-deposited films and those annealed at 100, 200, 300, and 400• C. The results reveal the formation of polycrystalline orthorhombic silver selenide films that remain stable without compositional change upon thermal annealing, in marked contrast to the agglomeration exhibited by silver selenide films deposited on Si without Cr film. The improvement in the thermal stability is attributed to compressive stress relief by a grainy morphology with large surface area, the formation of which is promoted by partially oxidized Cr adhesion film.

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Section: Discussion On Interface Formationmentioning

confidence: 99%

Characterization of silver selenide thin films grown on Cr‐covered Si substrates

Mohanty

Malar

Osipowicz

et al. 2008

Surface & Interface Analysis

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“…On the side walls of the island, the Ge(113) facets show a (2 × 2) periodicity. Zahl et al have reported an Sb-induced (2 × 1) LEED pattern on flat Ge(111) surfaces [16]. Also, Sb-induced (2 × 2) reconstruction has been found by Dabrowski et al [17] on Si(113) surfaces.…”

Section: Ge Growth On Sin X /Si(111)mentioning

confidence: 92%

“…On the other hand, the 3D islanding growth provides a unique method for making self-assembled Si and Ge quantum dots on Si substrates. It is well known that with a monolayer surfactant species such as Sb or As deposited on the substrate before epitaxy, the island formation can be suppressed [4][5][6][7][8]. Such surfactant-mediated growth is currently used to improve the quality of strained Si/Ge superlattices [9,10].…”

Section: Introductionmentioning

confidence: 99%

Ge islanding growth on nitridized Si and the effect of Sb surfactant

Wang

Cue

et al. 2002

J. Phys.: Condens. Matter

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The growth modes of Ge islands on SiN x -covered Si with and without a surfactant Sb layer are studied by scanning tunnelling microscopy. It is observed that on SiN x /Si(111), Sb cannot enhance the coverage of (111) facets of Ge islands, which are the dominant features in the late stage of Ge overlayer growth when Sb is not used. However, on SiN x /Si(001), Sb favours the growth of Ge (001) facets, which will shrink during the islanding growth if Sb is not used. The different behaviours with the (111) and (001) substrates suggest that the surfactant effect of Sb on the islanding growth of Ge on SiN x /Si is strongly orientation dependent.

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“…For instance, the adsorption of group V elements like As, Sb, or Bi suppresses the formation of large StranskiKrastanov islands, which are ubiquitous in Ge epitaxy on clean Si, and promote the growth of smooth Ge layers [1][2][3][4][5] with atomically sharp interfaces [6][7][8]. Especially on the Si(111) surface, the pre-adsorption of such surface active agents (surfactants) can also improve the structural quality of the Ge films, as the lattice mismatch is accommodated by an interfacial network of misfit dislocations [9][10][11], which prevents the lattice relaxation via extendeddefect formation in the Ge film [12,13].…”

Section: Introductionmentioning

confidence: 99%