Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots

Yuan, Qing; Liang, Baolai; Zhou, Chao; Wang, Ying; Guo, Yukun; Wang, Shufang; Fu, Guangsheng; Mazur, Yuriy I.; Ware, Morgan E.; Salamo, Gregory J.

doi:10.1186/s11671-018-2792-y

Cited by 19 publications

(10 citation statements)

References 26 publications

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“…Additional STEM and EDX images are given in the Supporting Information (Figures S1 and S2). First, almost pure InP surface quantum dots (QDs) are evidenced in Figure c (black circular areas) and in Figure j, arising from demixion due to the non-equilibrium growth conditions used . Removal of these surface QDs will be discussed hereafter.…”

Section: Results and Discussionmentioning

confidence: 99%

“…First, almost pure InP surface quantum dots (QDs) are evidenced in Figure 1c (black circular areas) and in Figure 1j, arising from demixion due to the non-equilibrium growth conditions used. 20 Removal of these surface QDs will be discussed hereafter. Second, a preferential incorporation of In in the close vicinity of the antiphase boundary singularity is observed, together with an In-rich phase at the surface where the singularity emerges.…”

Section: Resultsmentioning

confidence: 99%

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Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

et al. 2020

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Highly polar materials are usually preferred over weakly polar ones to study strong electron-phonon interactions and its fascinating properties. Here, we report on the achievement of simultaneous confinement of charge carriers and phonons at the vicinity of a 2D vertical homovalent singularity (antiphase boundary, (APB)) in an (In, Ga)P/SiGe/Si sample. The impact of the electron-phonon interaction on the photoluminescence processes is then clarified, by combining transmission electron microscopy, X-ray diffraction, ab initio calculations, Raman spectroscopy and photoluminescence experiments. 2D localization and layer group symmetry properties of homovalent electronic states and phonons are studied by first principles methods, leading to the prediction of a type II band alignment between the APB and the surrounding semiconductor matrix. A Huang-Rhys factor of 8 is finally experimentally determined for the APB emission line, underlining that a large and unusually strong electron-phonon coupling can be achieved by 2D vertical quantum confinement in an undoped III-V semiconductor. This work extends the concept of electron-phonon interaction to 2D vertically buried III-V homovalent nanoobjects and therefore provides different approaches for material designs, vertical carrier transport, heterostructure design on silicon and device applications with weakly polar semiconductors.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

et al. 2020

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“…4, c и d, точки). Из полученных зависимостей виден значительный длинноволновый сдвиг пиков ФЛ с увеличением температуры, что ранее уже отмечалось в литературе как для КТ InAs/GaAs [33,34], так и для КТ In 0.8 Ga 0.2 As [35]. С использованием формулы Варшни [36,37]…”

Section: оптические свойства квантовых точек Inas и Ingaasunclassified

Сравнительный анализ оптических и физических свойств квантовых точек InAs, In-=SUB=-0.8-=/SUB=-Ga-=SUB=-0.2-=/SUB=-As и фотоэлектрических преобразователей на их основе

Салий¹,

Минтаиров²,

Надточий³

et al. 2020

Физика И Техника Полупроводников

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Методом металлоорганической газофазной эпитаксии получены квантовые точки InAs и In0.8Ga0.2As в матрице GaAs, а также GaAs-фотопреобразователи с квантовыми точками обоих типов в i-области. В результате исследования методами фотолюминесценции и просвечивающей электронной микроскопии установлено, что ансамбль квантовых точек In0.8Ga0.2As имеет высокую однородность, содержит меньшее число дефектных квантовых точек большого размера, а также обеспечивает снижение механических напряжений в структуре. Анализ спектральных зависимостей внутреннего квантового выхода показал сохранение качества матрицы фотоэлектрического преобразователя с квантовыми точками In0.8Ga0.2As на уровне, близком к качеству реперного GaAs-фотопреобразователя при встраивании до 20 рядов квантовых точек. При этом обеспечивается линейный прирост добавочного фототока, генерированного за счет поглощения подзонных фотонов в квантовых точках In0.8Ga0.2As, с увеличением количества рядов квантовых точек, так как сохраняется величина прироста фототока в пересчете на один ряд. Ключевые слова: фототок, квантовые точки, фотоэлектрические преобразователи.

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“…Due to the special surface sensitivity, it is expected that these SQDs should be good materials to function as humidity sensors [10,11]. Thus, a recent surge in research into the surface-sensitive performance of InGaAs SQDs has been reported [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

et al. 2022

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Stacking growth of the InGaAs quantum dots (QDs) on top of a carrier injection layer is a very useful strategy to develop QD devices. This research aims to study the carrier injection effect in hybrid structures with a layer of In0.4Ga0.6As surface quantum dots (SQDs), coupled to an injection layer of either one layer of In0.4Ga0.6As buried QDs (BQDs) or an In0.15Ga0.85As quantum well (QW), both through a 10 nm GaAs thin spacer. Spectroscopic measurements show that carrier capture and emission efficiency for SQDs in the BQD injection structure is better than that of the QW injection, due to strong physical and electrical coupling between the two QD layers. In the case of QW injection, although most carriers can be collected into the QW, they then tunnel into the wetting layer of the SQDs and are subsequently lost to surface states via non-radiative recombination. Therefore, the QW as an injection source for SQDs may not work as well as the BQDs for stacking coupled SQDs structures.

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Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots

Cited by 19 publications

References 26 publications

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities

Сравнительный анализ оптических и физических свойств квантовых точек InAs, In-=SUB=-0.8-=/SUB=-Ga-=SUB=-0.2-=/SUB=-As и фотоэлектрических преобразователей на их основе

Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

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