Internal transitions of excitons and hole cyclotron resonance in undoped GaAs/AlGaAs quantum wells by optically detected resonance spectroscopy

Nickel, H.; Herold, G.; Salib, M. S.; Κιοσέογλου, Γ.; Petrou, A.; McCombe, B. D.; Broido, David

doi:10.1016/s0921-4526(98)00237-3

Cited by 15 publications

(26 citation statements)

References 9 publications

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“…we found that the lowest FIR frequency resonance is due to freeelectron CR and not to h/i 2 p--* 2s transition energies, as suspected by Cerne et al [2]. In order to analyze the recent magnetoexciton experimental FIR data by Nickel et al [3], one should notice that, for wide wells, heavy and light holes should be strongly mixed, and holesubband mixing must be taken into account. In order to mimic this effect, one may choose to continue to work with the parabolic one-particle Hamiltonian and adequately change the effective-mass parameters and dielectric constant in order to fit the FIR experimental transitions.…”

Section: Resultssupporting

confidence: 60%

“…Also, although actual measurements are for GaAs-Ga.7AIfr. 3 As superlattices (SLs), we have ignored SL tunneling effects and performed calculations for single isolated GaAs-Ga0.T 7 Ao. 0 3 As QWs.…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…In particular, Salib et al [I] recently observed several internal excitonic transitions and found the Is --2p+ heavy-hole (hh) exciton transition as dominant in GaAs-Gao.7A10. 3 As MQWs of L. = 80 A and L, = 125 A of well width. They have also assigned a "weak" feature and a "very weak" feature in the experimental spectra to hh magnetoexciton ls ---> 3p+ and ls -> 4p, transitions, respectively, based primarily on the magnitude of the energy separations with respect to the Is -2p+ transition.…”

Section: Introductionmentioning

confidence: 99%

“…The dominant resonance was assigned to the Is --2 p. hh exciton transition, and was found to persist even when the FIR electric field was comparable to the electric field which binds the exciton. More recently, Nickel et al [3] have used ODR spectroscopy to study electron and hole CRs and various internal excitonic transitions in a number of GaAs-(Ga,AI)As MQW structures. They concluded that more work is necessary to confirm the 2p± assignments, to resolve the nature of the higher energy intraexcitonic transitions, and to observe light-hole (1h) CR and associated intraexcitonic transitions.…”

Section: Introductionmentioning

confidence: 99%

“…They concluded that more work is necessary to confirm the 2p± assignments, to resolve the nature of the higher energy intraexcitonic transitions, and to observe light-hole (1h) CR and associated intraexcitonic transitions. From the theoretical point of view, Duque et al [4] have performed a study of Is -2p±, I s --) 3 p±, and I s --4p±: 1h and hh magnetoexcitonic transition energies in GaAs-Gaj.,AIlAs QWs within a variational procedure in the effective-mass approximation, and although some of the theoretical magnetoexciton transition energies agree quite well with experimental measurements, other calculated results only reproduce qualitative features of experiment. In order to provide a better understanding of the terahertz transitions of confined magnetoexcitons in GaAs -Ga 1 .,AlAs QWs and of the ODR experimental data by Salib et al [I], Cerne et al [2], and Nickel et al [3], here we perform a more detailed theoretical study of the various intraexcitonic transitions in GaAs -Gaj_,AlAs QWs under magnetic fields applied along the QW growth direction.…”

Section: Introductionmentioning

confidence: 99%

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Intra-magnetoexciton transitions in semiconductor quantum wells

et al. 2001

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Highly sensitive optically detected resonance experiments have shown that magnetoexcitons in GaAs-(Ga,AI)As semiconductor quantum wells have discrete internal energy levels, with transition energies found in the far-infrared (terahertz) region. Here we are concerned with a theoretical study of the terahertz transitions of light-hole and heavy-hole confined magnetoexcitons in GaAs-(Ga,A1)As quantum wells, under a magnetic field applied in the growth direction of the semiconductor heterostructure. The various magnetoexciton states are obtained in the effective-mass approximation by expanding the corresponding exciton-envelope wave functions in terms of appropriate Gaussian functions. The electron and hole cyclotron resonances and intra-magnetoexciton transitions are theoretically studied by exciting the allowed electron, hole and internal magnetoexcitonic transitions with far-infrared radiation. Theoretical results are obtained for both the intra-magnetoexciton transition energies and oscillator strengths associated with excitations from Is -like to 2s, 2p±, and 3p± -like magnetoexciton states, and from 2p-to 2s -like exciton states. Present results are in overall agreement with available optically detected resonance measurements and clarifies a number of queries in previous theoretical work.

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Section: Resultssupporting

confidence: 60%

Section: Theoretical Frameworkmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Intra-magnetoexciton transitions in semiconductor quantum wells

et al. 2001

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Confined Magneto-Excitons in GaAs-(Ga, Al)As Quantum Wells

Duque

Montes

Porras‐Montenegro

et al. 2000

phys. stat. sol. (b)

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We have used the effective‐mass approximation and a variational procedure in the study of internal transitions associated with 1s‐, 2p‐, 3p‐, and 4p‐like magneto‐exciton confined states in GaAs–(Ga, Al)As quantum wells, under a magnetic field applied in the growth direction. Theoretical results were obtained as a function of the applied magnetic field and for several well widths. The calculated far‐infrared intraexcitonic transition energies are found in good agreement with recent experimental measurements obtained via a highly sensitive optically detected resonance technique.

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A Theoretical Study of the Terahertz Dynamics of Magnetoexcitons in GaAs-(Ga,Al)As Quantum Wells

Oliveira

Duque

Porras‐Montenegro

2002

phys. stat. sol. (a)

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Recent experimental measurements obtained via a highly sensitive optically detected resonance technique have shown that magnetoexcitons in GaAs-(Ga,Al)As semiconductor quantum wells (QWs) have discrete internal energy levels, with transition energies found in the far-infrared (terahertz) region. This work presents a theoretical study of some internal exciton transitions of light-and heavyhole confined magnetoexcitons in GaAs-(Ga,Al)As QWs under magnetic fields applied in the growth direction of the semiconductor heterostructure. We use a variational procedure in the effective-mass approximation, and a parabolic dispersion for electrons, and assume the spin-orbit splitting to be large enough so that the interaction between J ¼ 3/2 and J ¼ 1/2 hole states may be disregarded. The 1s ! 2s and 1s ! 2p þ theoretical transitions are in good agreement with optically detected resonance measurements for far-infrared intraexcitonic transition energies in GaAs-(Ga,Al)As QWs.Introduction The study of magneto-optical properties of type I and type II semiconductor superlattices by means of absorption, photoluminescence, magnetoreflectance, and other techniques [1-8] has attracted considerable interest. More specifically, recent optically detected resonance (ODR) experimental results have shown that excitons in GaAs-(Ga,Al)As quantum wells (QWs) have discrete internal energy levels, and transition energies are found in the far-infrared (FIR) region. In particular, Cerne et al. [5] investigated the terahertz (THz) dynamics of magnetoexcitons in GaAs-(Ga,Al)As undoped multiple quantum wells (MQWs) under magnetic fields applied perpendicular to the well interfaces, and observed resonant FIR absorption by the confined magnetoexcitons. The dominant resonance in GaAs-Ga 0.70 Al 0.30 As MQWs (with well and barrier widths of 100 and 150 A, respectively) was assigned to the 1s ! 2p þ intraexcitonic transition of a heavyhole exciton. The absorption feature was found to persist even when the FIR electric field was comparable to the electric field that binds the exciton. Analogous results were obtained by Nickel et al. [6,7] who performed a detailed ODR experimental study of internal transitions of confined magnetoexcitons in two GaAs-Ga 0.70 Al 0.30 As MQW structures (125 A well/150 A barrier, and 80 A well/150 A barrier), with several resonances assigned to 1s ! 2p þ , 3p þ , and 4p þ internal excitonic transitions.In the study reported here, we work within the effective-mass approximation and follow a variational procedure to investigate some properties of magnetoexcitons in GaAs-(Ga,Al)As QWs. In particular, we are interested in evaluating the internal magnetoexciton transitions in GaAs-Ga 1--x Al x As QWs to compare with the experimental data of Cerne et al. [5] and Nickel et al. [6,7].

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Internal transitions of excitons and hole cyclotron resonance in undoped GaAs/AlGaAs quantum wells by optically detected resonance spectroscopy

Cited by 15 publications

References 9 publications

Intra-magnetoexciton transitions in semiconductor quantum wells

Intra-magnetoexciton transitions in semiconductor quantum wells

Confined Magneto-Excitons in GaAs-(Ga, Al)As Quantum Wells

A Theoretical Study of the Terahertz Dynamics of Magnetoexcitons in GaAs-(Ga,Al)As Quantum Wells

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