Internal magnetic field in thin ZnSe epilayers

Ghosh, Sayantani; Stern, Nathaniel P.; Maertz, B.; Awschalom, D. D.; Xiang, Gang; Zhu, Meng; Samarth, N.

doi:10.1063/1.2404600

Cited by 6 publications

(2 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A g-factor of $1.1 was found for all cases, very close in value to the electron g-factor in ZnSe. 14 This supports the notion that the electrons are within the ZnSe matrix. The fast dephasing time of 217 ps found with an applied magnetic field can be attributed to inhomogeneities within the ZnSe matrix from QDs and defects.…”

Section: Resultssupporting

confidence: 71%

Spin dynamics of ZnSe-ZnTe nanostructures grown by migration enhanced molecular beam epitaxy

Deligiannakis

Dhomkar

et al. 2017

Journal of Applied Physics

View full text Add to dashboard Cite

We study the spin dynamics of ZnSe layers with embedded type-II ZnTe quantum dots using time resolved Kerr rotation (TRKR). Three samples were grown with an increasing amount of Te, which correlates with increased quantum dot (QD) density. Samples with a higher quantum dot density exhibit longer electron spin lifetimes, up to $1 ns at low temperatures. Tellurium isoelectronic centers, which form in the ZnSe spacer regions as a result of the growth conditions, were probed via spectrally dependent TRKR. Temperature dependent TRKR results show that samples with high QD density are not affected by an electron-hole exchange dephasing mechanism. Published by AIP Publishing.

show abstract

Section: Resultssupporting

confidence: 71%

Spin dynamics of ZnSe-ZnTe nanostructures grown by migration enhanced molecular beam epitaxy

Deligiannakis

Dhomkar

et al. 2017

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…In analogy to real applied magnetic fields, strain-induced effective fields have been used for both coherent spin precession and electrically-driven spin resonance [8]. The internal magnetic field has been used for manipulating spin transport in GaAs, InGaAs, and ZnSe devices [37,38]. Although the spin-orbit coupling parameter is much smaller in ZnSe compared to GaAs, the spin-splitting energy scale is surprisingly comparable.…”

Section: Spin Manipulation Via "Effective Magnetic Fields"mentioning

confidence: 99%

Spintronics without magnetism

Awschalom

Samarth

2009

Physics

246

256

View full text Add to dashboard Cite

The spin-orbit effect is at the heart of efforts to merge spintronics-where information is carried and stored by spin, rather than by charge-with semiconductor technology. Subject Areas: SpintronicsThe 2007 Nobel Prize in Physics (awarded to Albert Fert and Peter Grünberg) highlighted the remarkably rapid transition of "spintronics" from fundamental studies of spin-dependent transport in metallic ferromagnetic multilayers [1] to a device technology critical to the magnetic storage industry. While the mainstream of spintronics continues to expand the scientific and technological frontiers of ferromagnetic metal devices [2], a parallel effort in semiconductor spintronics is growing vigorously [3]. This incarnation of spintronics has the same general motivation as metallic spintronics: to understand and control the transport of spin-polarized currents and to eventually apply this knowledge in information technologies. However, semiconductor spintronics also brings with it the promise of integrating the best qualities of two disparate worlds: the unparalleled storage capacity of magnetic memory and the impressive computing power of semiconductor logic. Add to this the possibility of exploiting the relatively long-lived quantum coherence of spin states in semiconductors [4] and one can even imagine unleashing the full power of the quantum world in truly revolutionary devices that exploit both the amplitude and phase of wave functions. Needless to say, the realization of this potential requires concerted efforts aimed at both understanding the mechanisms for spindependent transport in semiconductors as well as critically comparing spin-based device schemes with existing technologies [5].At first glance, it seems almost a given that ferromagnetism would be a necessary and integral component of any scheme for semiconductor spintronic devices. For instance, a semiconductor spintronic device generically requires an imbalance between spin "up" and "down" populations of electrons (or holes). We can imagine this imbalance being created by the injection of spin-polarized charge carriers from a ferromagnet, which acts as a spin polarizer. Alternatively, we could build devices from ferromagnetic semiconductors that have an intrinsic spin imbalance. Indeed, important advances have been made in semiconductor spintronics by using these very notions, with a number of interesting proof-of-concept semiconductor spintronic device demonstrations that incorporate ferromagnetic elements for injecting, detecting, and manipulating spins [6]. But, discoveries in recent years have inspired a completely different avenue to semiconductor spintronics-one that does not involve any ferromagnetism whatsoever [7][8][9].The development of this alternate track-"spintronics without magnetism"-relies on our ability to manipulate carrier spins in semiconductors through the spin-orbit interaction. This is an attractive pathway for designing semiconductor spintronic devices because spin-orbit coupling enables the generation and manipulation of spins solel...

show abstract

Exploring Geometric Chirality in Nanocrystals for Boosting Solar‐to‐Hydrogen Conversion

Fu,

Gao,

Zhang

et al. 2024

Angewandte Chemie

View full text Add to dashboard Cite

Advancing catalyst design is pivotal for the enhancement of photocatalytic processes in renewable energy conversion. The incorporation of structural chirality into conventional inorganic solar hydrogen nanocatalysts promises a significant transformation in catalysis, a feature absent in this field. Here we unveil the unexplored potential of geometric chirality by creating a chiral composite that integrates geometric chiral Au nanoparticles (NPs) with two‐dimensional C3N4 nanosheets, significantly boosting photocatalytic H2 evolution beyond the achiral counterparts. The superior performance is driven by the geometric chirality of Au NPs, which facilitates efficient charge carrier separation through the favorable C3N4‐chiral Au NP interface and chiral induced spin polarization, and exploits high‐activity facets within the concave surfaces of chiral Au NPs. The resulting synergistic effect leads to a remarkable increase in photocatalytic H2 evolution, with an apparent quantum yield of 44.64% at 400 nm. Furthermore, we explore the selective polarized photo‐induced carrier separation behavior, revealing a distinct chiral‐dependent photocatalytic HER performance. Our work advances the design and utilization of chiral inorganic nanostructures for superior performance in energy conversion processes.

show abstract

Internal magnetic field in thin ZnSe epilayers

Abstract: Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy

Cited by 6 publications

References 17 publications

Spin dynamics of ZnSe-ZnTe nanostructures grown by migration enhanced molecular beam epitaxy

Spin dynamics of ZnSe-ZnTe nanostructures grown by migration enhanced molecular beam epitaxy

Spintronics without magnetism

Exploring Geometric Chirality in Nanocrystals for Boosting Solar‐to‐Hydrogen Conversion

Contact Info

Product

Resources

About