Internal linear inductively coupled plasma (ICP) sources for large area FPD etch process applications

Lee, Y.J.; Kim, K.N.; Song, Byung-Pan; Yeom, Geun Young

doi:10.1016/s1369-8001(02)00129-4

Cited by 4 publications

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An increase in the plasma density of ICP-type plasmas by the application of a small axial magnetic field was also observed in other experiments. 13,14) The application of an axial magnetic field of 10 G to the ICP-type plasma sources increased plasma density to approximately 100% and the further increase in axial magnetic field decreased plasma density. The exact axial magnetic field showing the highest plasma density appears to be dependent on the system size and configuration.…”

mentioning

confidence: 99%

Effects of Axial Magnetic Field on Neutral Beam Etching by Low-Angle Forward-Reflected Neutral Beam Method

Lee

Park

Yeom

2004

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A low axial magnetic field was applied to an inductively coupled plasma (ICP) ion source used to generate a neutral beam for a low-angle forward-reflected neutral (LAFRN) beam system, and its effects on the ICP ion source and the features of Si and SiO 2 etching using the LAFRN beam system for SF 6 gas were investigated. As a result of applying a low axial magnetic field of approximately 20 G, a significant increase in SF 3 þ ion flux extracted from the source was observed among the various reactive ions generated using SF 6 gas, and the etch rates of Si and SiO 2 using a neutral beam formed by the magnetically enhanced SF 6 ICP source were also increased. The application of the low axial magnetic field also improved the etch uniformity of the neutral beam etching system.

show abstract

mentioning

confidence: 99%