Internal Impurity Levels in Semiconductors: Experiments in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Silicon

Zwerdling, S.; Button, Kenneth; Lax, B.; Roth, Laura M.

doi:10.1103/physrevlett.4.173

Cited by 147 publications

(30 citation statements)

References 8 publications

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“…These features for Nat Si were observed by Nishino et al 14 who attributed the former to a TO-assisted creation of an indirect exciton associated with the spin-orbit split ⌫ 7 + ͑p 1/2 ͒ zone center valence band maximum and the ⌬ 1 conduction band minima. The basis for this interpretation is the magnitude of the spin-orbit splitting ⌬ SO being 44.1 meV determined from the Lyman spectrum of boron acceptors in Si by Zwerdling et al, 25 in exact coincidence with that from WMT. 14 The feature labeled TA+ O͑n =1͒ is due to the indirect excitonic transition from the ⌫ 8 + valence band assisted by the simultaneous emission of TA and zone center optical phonon (O).…”

Section: ͑1͒mentioning

confidence: 99%

Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon

Tsoi

Alawadhi

et al. 2004

Phys. Rev. B

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Section: ͑1͒mentioning

confidence: 99%

Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon

Tsoi

Alawadhi

et al. 2004

Phys. Rev. B

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“…2, a typical absorption spectrum of a Si:B sample is shown at a temperature of 5 K. A number of absorption lines are clearly visible and these can all be assigned to transitions in Si:B, namely, the 1Γ þ 8 → odd-parity impurity transitions (lines 1; 2; 3; 4; 4a; 4b; 5; 6; …; 10; nomenclature according to Ref. [14]). The closely spaced 4, 4a, and 4b lines are not resolved, because these lines are significantly concentration broadened in the Si:B sample.…”

Section: Resultsmentioning

confidence: 99%

“…If the 1Γ þ 7 state is not in the band gap, this laser mechanism is not possible. , which are regularly observed in low-temperature absorption spectroscopy [14]. The 1Γ þ 7 ground state of the split-off state series (Γ þ 7 band) is expected to occur in between the two horizontal dashed lines: between resonant to the Γ þ 8 band location [14] and the theoretically predicted in the band gap [15].…”

Section: Introductionmentioning

confidence: 99%

“…, which are regularly observed in low-temperature absorption spectroscopy [14]. The 1Γ þ 7 ground state of the split-off state series (Γ þ 7 band) is expected to occur in between the two horizontal dashed lines: between resonant to the Γ þ 8 band location [14] and the theoretically predicted in the band gap [15]. The light blue dashed line is the position where the 1Γ þ 7 ground state should appear according to Raman spectroscopy [17,18].…”

Section: Introductionmentioning

confidence: 99%

“…The energy structure of hydrogenlike acceptors in silicon has some peculiarities that are related to the strong spinorbit (SO) coupling of the valence subbands (labeled Γ þ 8 and Γ þ 7 [14,15], Fig. 1).…”

Section: Introductionmentioning

confidence: 99%

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Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors

et al. 2014

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Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on theintracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Γ − 7 , 1Γ − 6 , and 4Γ − 8 states, and the lower laser level for both emission lines is the 2Γ þ 8 state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Γ þ 8 state and not the 1Γ þ 7 split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.

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Local vibrational modes of interstitial boron–interstitial oxygen complex in silicon

Мурин

Ластовский

Tolkacheva

et al. 2016

Physica Status Solidi (a)

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.In the present work, we report local vibrational mode (LVM) related absorption lines which are assigned to the complex incorporating interstitial boron and interstitial oxygen atoms (B i O i ), a possible precursor of the center responsible for lightinduced degradation (LID) in solar cells produced from boron-doped oxygen-rich silicon. Fourier transform infrared absorption (IR) spectroscopy was used for detection and analysis of absorption lines due to defects which were created in boron-doped Czochralski-grown Si samples by irradiation with 6 or 10 MeV electrons at room temperature. Changes in the IR absorption spectra upon isochronal annealing of the irradiated samples in the temperature range 75-225 8C have also been monitored. A set of previously unreported LVM lines with the same formation and elimination behavior has been studied. The most intense lines of the set are found to be at 991, 721, and 550 cm À1 . On the basis of an analysis of changes in intensity of the lines with the concentrations of impurities in the silicon and on the similarity of their annealing features with those for the DLTS signal due to the B i O i center, it is argued that the lines are related to the LVMs of this defect. The positions of the lines have been compared with the previously reported LVMs derived from ab initio modeling calculations for different configurations of the B i O i complex. A configuration having calculated LVMs close to those determined experimentally has been found and the origins of the modes are discussed.

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Internal Impurity Levels in Semiconductors: Experiments inp-Type Silicon

Cited by 147 publications

References 8 publications

Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon

Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon

Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors

Local vibrational modes of interstitial boron–interstitial oxygen complex in silicon

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