Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon

Tsoi, Stanislav; Alawadhi, Hussain; Lu, Xiaochen; Ager, Joel W.; Liao, Chang; Riemann, H.; Häller, E. E.; Rodríguez, S.; Ramdas, A. K.

doi:10.1103/physrevb.70.193201

Cited by 17 publications

(1 citation statement)

References 28 publications

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“…Recent high-resolution spectroscopic studies of excitonic and impurity transitions in high-quality samples of isotopically enriched Si have discovered the broadening of bound exciton emission (absorption) lines connected with isotope-induced disorder as well as the dependence of their binding energy on the isotope mass [11][12][13]. The last effect was early observed on the bound excitons in diamond [14,15], and earlier on the free excitons in LiH x D 1−x mixed crystals [16].…”

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confidence: 99%

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiH_xD_1−xmixed crystals

Plekhanov¹

2007

J. Phys.: Condens. Matter

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The results of the quantitative study of the renormalization of binding energy the Wannier -Mott exciton by the isotope effect are present for the first time. For this purpose accurate measurements of the intrinsic luminescence and mirror reflection spectra of LiH x D 1−x mixed crystals with a clean surface in the temperature range 2 -100 K were carried. Nonlinear dependence of exciton binding energy E b on the isotope mass E b ∼ f(x) is caused by the bands fluctuation broadening which is connected with the isotopeinduced-disorder. Temperature dependence of exciton binding energy is briefly discussed. The extrapolation of the asymptotic linear behavior of the exciton maximum energy to T = 0 K enables to estimate the zero -point renormalization of the exciton binding energy. PACS: 32.10B; 71.20P; 78.20; 78.40F.A wide variety of novel isotope effects have been discovered on last four decades [1][2][3][4][5][6] owing to the availability of high-quality bulk semiconductor and insulator crystals with controlled isotopic composition (see, also, reviews [7-10]). Recent high resolution spectroscopic studies of excitonic and impurity transitions in high-quality samples of isotopically enriched Si have discovered the broadening bound excitons emission (absorption) lines connected with isotopeinduced-disorder as well as the dependence of their binding energy on the isotope mass [11][12][13]. The last effect was early observed on the bound excitons in diamond [14-15] and more earlier on the free excitons in LiH x D 1−x mixed crystals [16].As is well-known (see, for example [16,17,4]) the band gap energy E g in the T−→0 limit has a dependence on the average isotopic mass M due to two effects: a) the renormalization of E g by the electron-phonon interaction coupled with the dependence of the zero-point amplitudes on M (see, also [18]) and b) the dependence of the lattice constant on M , leading to a change in E g through the hydrostatic deformation potential. The electron-phonon term is dominant [19,20] and in the case of semiconductor crystals (C; Ge; Si) with a weak isotope scattering potential is varied approximately as M −1/2 . The value of the T =0 electron-phonon renormalization energy contribution to E g can be independly determined from an extrapolation of the high temperature linear dependence 1

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confidence: 99%

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiH_xD_1−xmixed crystals

Plekhanov¹

2007

J. Phys.: Condens. Matter

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Isotopically engineered semiconductors: from the bulk to nanostructures

Ager

Häller

2006

Physica Status Solidi (a)

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Research performed with semiconductors with controlled isotopic composition is evolving from the measurement of fundamental properties in the bulk to those measured in superlattices and nanostructures. This is driven in part by interests associated with the fields of “spintronics” and quantum computing. In this topical review, which is dedicated to Prof. Abstreiter, we introduce the subject by reviewing classic and recent measurements of phonon frequencies, thermal conductivity, bandgap renormalizations, and spin coherence lifetimes in isotopically controlled bulk group IV semiconductors. Next, we review phonon properties measured in isotope heterostructures, including pioneering work made possible by superlattices grown by the group of Prof. Abstreiter. We close the review with an outlook on the exciting future possibilities offered through isotope control in 1, 2, and 3 dimensions that will be possible due to advances in nanoscience. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Energy Band Structure

Plekhanov¹

2018

Introduction to Isotopic Materials Science

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Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon

Cited by 17 publications

References 28 publications

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiH_xD_1−xmixed crystals

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiH_xD_1−xmixed crystals

Isotopically engineered semiconductors: from the bulk to nanostructures

Energy Band Structure

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Electron-phonon renormalization of electronic band gaps of semiconductors: Isotopically enriched silicon

Cited by 17 publications

References 28 publications

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiHxD1−xmixed crystals

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiHxD1−xmixed crystals

Isotopically engineered semiconductors: from the bulk to nanostructures

Energy Band Structure

Contact Info

Product

Resources

About

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiH_xD_1−xmixed crystals

Direct observation of the effect of isotope-induced disorder on the exciton binding energy in LiH_xD_1−xmixed crystals