Internal field and self-polarization in lead zirconate titanate thin films

Osipov, V. V.; Киселев, Д. А.; Kaptelov, E. Yu.; Сенкевич, С. В.; Пронин, И. П.

doi:10.1134/s1063783415090267

Cited by 14 publications

(8 citation statements)

References 26 publications

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“…For the same sample, there is no internal electric field. As noted in [15], from a practical point of view, when using thin ferroelectric films in non-destructive memory (FeRAM) devices, the presence of an internal electric field is a parasitic effect, leading to a preferred orientation of spontaneous polarization (its normal component) in the direction of either the lower or upper electrode of the ferroelectric capacitor. In microelectromechanics (MEMS), by contrast, the presence of an internal field in a thin film is a condition for increased reliability of MEMS devices [16].…”

Section: Resultsmentioning

confidence: 99%

Effect of dopant on piezoelectric and dielectric properties of thin films Bi-=SUB=-3.25-=/SUB=-La-=SUB=-0.75-=/SUB=-Ti-=SUB=-3-x-=/SUB=-A-=SUB=-x-=/SUB=-O-=SUB=-12-=/SUB=- (A --- Mn, Zr, Nb)

Kiselev

Starukhina

Ilina

et al. 2022

Physics of the Solid State

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It is shown that microstructure, dielectric and piezoelectric properties change in films based on lanthanum-substituted bismuth titanate (BLT) depending on the alloying impurity material, which leads to changes in coercive voltage, internal displacement field and control coefficient. Keywords: lead-free ferroelectric films, bismuth titanate, electrophysical properties, capacitance-voltage characteristics, piezoresponse force microscopy.

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Section: Resultsmentioning

confidence: 99%

Effect of dopant on piezoelectric and dielectric properties of thin films Bi-=SUB=-3.25-=/SUB=-La-=SUB=-0.75-=/SUB=-Ti-=SUB=-3-x-=/SUB=-A-=SUB=-x-=/SUB=-O-=SUB=-12-=/SUB=- (A --- Mn, Zr, Nb)

Kiselev

Starukhina

Ilina

et al. 2022

Physics of the Solid State

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“…In addition, there are also 180°, 71°, and 109° domains, for example, which depend on the crystallographic structure and available polarization directions. [68,[84][85][86] The polarization direction of a ferroelectric can be switched by external electric field and a polarization-electric field (P-E) loop, shown in Figure 1d, demonstrates the processes of polarization reorientation and ferroelectric hysteresis, which can be ascribed to the interaction between domain wall motion and lattice defects. When the applied electric field is above the coercive field (E c ), the domains in the field orientation will grow through domain wall movement.…”

Section: Domain and Domain Wall Motionmentioning

confidence: 99%

Scavenging Energy Sources Using Ferroelectric Materials

Bowen

Yang

2021

Adv Funct Materials

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Ferroelectric materials have attracted interest for over a hundred years as a result of their spontaneous polarization and a polarization orientation that can be reversed by the application of an external electric field. In addition, the degree of polarization can be affected by external stimuli such as vibrations, stress, heat, and light. These properties enable ferroelectric materials to be used to fabricate nanogenerators, which are devices used in energy scavenging applications and provide an opportunity to obtain electrical energy from a variety of external stimuli. This review discusses the development of ferroelectric-based nanogenerators for scavenging mechanical, thermal, and solar energies through the piezoelectric effect, pyroelectric effect, and photovoltaic effect, respectively. The mechanisms of the effects and the pathways to optimize the output performance of the nanogenerators are analyzed in detail. Recent developments in energy harvesting using ferroelectric materials are discussed with the objective to motivate attention and efforts in this growing field.

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“…8.2). The reason for the high stability of the internal field (self-polarization) is apparently associated not only with a high concentration of excess lead oxide localized near the lower interface of the film, but also with a change in its location (Osipov et al 2015).…”

Section: Dielectric Properties Studymentioning

confidence: 99%

Microstructure and properties of polycrystalline PZT films obtained by RF magnetron sputtering with fine variation of the composition near morphotropic phase boundary

Dolgintsev

Kaptelov

Сенкевич

et al. 2021

Physics of Complex Systems

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The article discusses the possibilities of fine composition variation of polycrystalline PZT films at the morphotropic phase boundary. The composition of thin films prepared by RF magnetron sputtering of a ceramic target of stoichiometric composition PbZr 0.54 Ti 0.46 O 3 was varied by changing the distance from the target to the substrate in the range of 30-70 mm. This made it possible to change the composition by ~1.5%. The study focused on the dielectric properties of the formed self-polarized films. The study found that the resistance to external electric fields depends on the conditions of film preparation.

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Internal field and self-polarization in lead zirconate titanate thin films

Cited by 14 publications

References 26 publications

Effect of dopant on piezoelectric and dielectric properties of thin films Bi-=SUB=-3.25-=/SUB=-La-=SUB=-0.75-=/SUB=-Ti-=SUB=-3-x-=/SUB=-A-=SUB=-x-=/SUB=-O-=SUB=-12-=/SUB=- (A --- Mn, Zr, Nb)

Effect of dopant on piezoelectric and dielectric properties of thin films Bi-=SUB=-3.25-=/SUB=-La-=SUB=-0.75-=/SUB=-Ti-=SUB=-3-x-=/SUB=-A-=SUB=-x-=/SUB=-O-=SUB=-12-=/SUB=- (A --- Mn, Zr, Nb)

Scavenging Energy Sources Using Ferroelectric Materials

Microstructure and properties of polycrystalline PZT films obtained by RF magnetron sputtering with fine variation of the composition near morphotropic phase boundary

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