Internal electric-field and segregation effects on luminescence properties of quantum wells

Cruz, G. González de la; Arenas, Anderson; Herrera, H.

doi:10.1063/1.1954889

Cited by 7 publications

(3 citation statements)

References 7 publications

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“…Finally, we speculate that this value can be due to inter-band (valence-conduction), not to intraband (conduction) absorption. Furthermore, our results are in good agreement with those reported by Gonzalez et al [31] concerning GaN/(Al,Ga)N QWs under spontaneous and piezoelectric fields. A large redshift of an experimental photoluminescence (PL) energy position is reported, which is attributed to a strong piezoelectric field.…”

Section: Resultssupporting

confidence: 93%

Stark effect-dependent of impurity-related nonlinear optical absorption of a (In,Ga)N-GaN spherical quantum dot

Ghazi¹,

Zorkani²,

Jorio³

2015

Phys. Scr.

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The nonlinear intra-conduction band optical properties of a wurtzite (In,Ga)N-GaN spherical quantum dot are investigated. The linear, third-order nonlinear, and total absorption coefficients (ACs) of the 1s-1p transition are computed via a combination of the quantum genetic algorithm (QGA) and the Hartree-Fock-Roothaan (HFR) method. The external applied electric field effect is examined within the single-band effective mass and the one-parabolic-band approximations under a finite potential barrier. It is found that the electric field has a great impact on the optical properties of QDs: (i) a significant redshift of the resonant peak is obtained, (ii) the maximum of the amplitude of the optical total AC decreases nonlinearly, and (iii) the Stark shift increases nonlinearly, tending toward the saturation regime. Compared with findings, good agreement is shown.

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Section: Resultssupporting

confidence: 93%

Stark effect-dependent of impurity-related nonlinear optical absorption of a (In,Ga)N-GaN spherical quantum dot

Ghazi¹,

Zorkani²,

Jorio³

2015

Phys. Scr.

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“…e 14 is also estimated by extracting key parameters from the Franz-Keldysh oscillations that allow its indirect determination [7] . However, in structures where, during the growth of the monolayers of the QW alloy, the surface segregation phenomenon can occur, the e 14 experimental determination becomes complex since this phenomenon produces a blue shift of the fundamental transition energy [8][9][10] . Therefore, methods used for determining e 14 , based on the calculations of the energy levels, should consider this effect, although it is rarely included in them and probably because it substantially increases their degree of difficulty.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Soto-Ortiz,

Torres-Miranda

2023

中国光学快报

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Here, we present a study of the effective piezoelectric constant (e 14 e ) temperature dependence in strained [111]-oriented zinc-blende quantum wells (QWs) embedded within a semiconductor optical amplifier (SOA). We determined e 14 e using a method that was insensitive to the segregation phenomenon and to the temperature dependence of the bandgap energy, which required neither fitting parameters nor temperature-dependent expressions for energy and out-of-plane effective masses of electrons and heavy holes. An e 14 e = −0.0534 ± 0.0040 C • m −2 at 23°C was obtained for an SOA with 1.2 nm [111]-oriented strained In 0.687 Ga 0.313 As/In 0.807 Ga 0.193 As 0.304 P 0.696 QWs. Unlike previously published research, where e 14 e magnitude increased as temperature rised, we extracted an e 14 e magnitude that decreased as temperature increased.

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“…[4][5][6][7] The existence of the strong built-in electric fields has attached much experimental and theoretical work on electric and optical properties in WZ InGaN/GaN strained heterostructures. [7][8][9][10] Exciton states and interband optical transitions of WZ InGaN/GaN strained quantum dots ͑QDs͒ have been investigated by experimental 11,12 and theoretical work. 7 These studies show that the electronic, dielectric, and optical properties are strongly affected by the strong built-in electric fields in WZ InGaN/ GaN strained QDs.…”

Section: Introductionmentioning

confidence: 99%

Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot

Xia

Zeng

Wei

2009

Journal of Applied Physics

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Articles you may be interested inEffects of magnetic field and the built-in internal fields on the absorption coefficients in a strained wurtzite GaN/AlGaN quantum dot AIP Conf. Shallow-donor impurity in zinc-blende InGaN/GaN asymmetric coupled quantum dots: Effect of electric field J. Appl. Phys. 107, 054305 (2010); 10.1063/1.3309826 Exciton states in wurtzite InGaN strained coupled quantum dots: Effects of piezoelectricity and spontaneous polarization J. Appl. Phys. 97, 083705 (2005);Within the framework of the effective-mass approximation, the barrier width dependence of the donor binding energy of hydrogenic impurity in a cylindrical wurtzite ͑WZ͒ InGaN/GaN strained quantum dot ͑QD͒ is calculated by means of a variational procedure, considering the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. Numerical results show that the built-in electric field and the donor binding energy of the impurity located at any growth direction position are obviously dependent on the barrier width in WZ In 0.1 Ga 0.9 N / GaN strained QD with a small barrier width ͑Ͻ8 nm͒. However, the built-in electric field and the donor binding energy of the impurity located at any growth direction position are insensitive to the barrier width in WZ In 0.1 Ga 0.9 N / GaN strained QD with a large barrier width ͑Ͼ8 nm͒. Moreover, the donor binding energy of the impurity located at the right boundary of the QD is independent of the barrier width with any dot height and indium composition when the barrier width is large ͑Ͼ8 nm͒.

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Internal electric-field and segregation effects on luminescence properties of quantum wells

Cited by 7 publications

References 7 publications

Stark effect-dependent of impurity-related nonlinear optical absorption of a (In,Ga)N-GaN spherical quantum dot

Stark effect-dependent of impurity-related nonlinear optical absorption of a (In,Ga)N-GaN spherical quantum dot

Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs

Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot

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