Intermediate type excitons in Schottky barriers of A ³ B ⁶ layer semiconductors and UV photodetectors

Abstract

Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of А 3 В 6 LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra.

Enhancing the photoresponse of a TlGaSe2semiconductor for ultraviolet detection applications

“…In contrast to other layered semiconductors such as GaSe, GaS, InSe [17][18][19], the layered TlGaSe 2 semiconductor has not been considered as a prominent candidate for UV detection. According to the existing data, TlGaSe 2 has a sufficiently wide band gap of ∼2.2 eV.…”