Interlayer interactions in 2D WS₂/MoS₂heterostructures monolithically grown byin situphysical vapor deposition

Abstract

MoS2/WS2 2D heterostructures grown by in-situ reactive sputtering deposition exhibit a strong interlayer coupling and associated exciton relaxation at the interface.

Impact of edge structures on interfacial interactions and efficient visible-light photocatalytic activity of metal–semiconductor hybrid 2D materials

“…26 The characteristics of van der Waals heterostructures are represented not only by the constituent monolayers but also by the interactions among the layers. Recently, various types of van der Waals heterostructures based on MoS 2 have exhibited several interesting electrical, optical, and magnetic properties, [27][28][29][30][31][32][33][34][35][36][37][38][39] but none has reported the mechanism of interface interactions (vdW heterostructures) between MoS 2 and Si 2 BN. We have chosen a 2D Si 2 BN (ref.…”

Internal Fields in Multilayer WS2/MoS2 Heterostructures Epitaxially Grown on Sapphire Substrates

“…From the results in Figure and , the WF of 3L‐WS 2 /3L‐MoS 2 and 3L‐WS 2 was estimated to be 5.09 and 5.26 eV, respectively. WS 2 /MoS 2 is known to form a so‐called type II heterostructure, as shown in Figure , which can effectively separate electron–hole pairs at the interface . Theoretical calculations showed that the valence band maximum was mainly occupied by the d orbital of W in the WS 2 layer, whereas the conduction band minimum primarily originated from the d orbital of Mo in the MoS 2 layer .…”

“…2D atomically thin layered materials, such as transition metal dichalcogenides (TMDs), have attracted growing research attention owing to their rich physics and various device applications . However, the nature of individual 2D materials, such as the zero bandgap of graphene, low carrier mobility of grown TMD, and the rapid degradation of black phosphorus under the atmospheric condition, has hindered the practical application of 2D materials .…”

“…However, the nature of individual 2D materials, such as the zero bandgap of graphene, low carrier mobility of grown TMD, and the rapid degradation of black phosphorus under the atmospheric condition, has hindered the practical application of 2D materials . To solve this problem, similar to the evolution of homo‐ to heterojunctions of compound semiconductors, attention has turned to the stacking of different 2D materials for possible device applications . Fabrication of TMD heterostructures enables the control of the transport and recombination mechanism of the carriers, which lead to enhanced electrical and optical properties.…”

“…Characterization and analysis techniques of the electrostatic potential distributions in TMD heterostructures are crucial to realize high performance and new functionality devices. Heterostructures consisting of monolayer TMDs have been investigated using X‐ray photoelectron spectroscopy, photoemission electron microscopy, angle‐resolved photoemission spectroscopy, and scanning tunneling microscopy/spectroscopy . Kelvin probe force microscopy (KPFM) is an alternative tool to study the potential gradient and potential barriers in metal/TMD and TMD/TMD heterojunctions .…”