With continuous research into twoâdimensional transition metal dichalcogenides (TMDs), a great number of highâperformance devices are emerging due to the unique structures and versatile properties of TMDs. As a representative of the groupâVII TMDs, rhenium disulfide (ReS2) has attracted increasing attention because the distorted octahedral crystal structure makes it distinctive from more widely known TMDs members, such as MoS2 and WSe2. It features layerâindependent electrical and anisotropic optical properties which are suitable for the applications of field effect transistors (FETs) and photodetectors. This review focuses on the recent research work about the electronic and optoelectronic applications based on novel 2D ReS2. In the first part, the unique crystal structures and properties are introduced. This is followed by the various preparation methods. Next, highâperformance FETs and photodetectors based on ReS2 are presented. Finally, conclusions are drawn and prospects proposed.