Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization

Photosensitive polyimide has enormous potential as a future dielectric interlayer material for potential use in large scale integrated (LSI) circuits. The block copolyimide known as 21-169 was synthesised via a single step polycondensation reaction. This procedure involved reacting dianhydrides with diamines in the presence of Yvalerolactone/pyridine catalyst in a NMP/toluene solvent system at 180°C. This experimentation involves two types of diazonaphtoquinone (DNQ) compound referred to as PC-5 and NT-200. The exposed films were subjected to a developing process using several alkaline aqueous solutions and tetramethylammonium hydroxide (TMAH). A solution of silane coupling reagent was found to be necessary for good adhesion between the polyimide layer and the silicon wafer. In this paper, the resulting products solubility characteristic and pattern shape of the exposed and unexposed areas at 365nm wavelength of light and 700mJ/cm2 were investigated. The contrast 7 value between the fully exposed and unexposed area was found to be above 1.1. The PC-5 photosensitive material was found to be an effective dissolution inhibitor for polyimide 21-169 in alkaline developer solution (AO).

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“…1,2001 dielectric interlayer material. The electric properties of our polyimide have been already reported in Ref [4].…”

Section: Introductionmentioning

confidence: 86%

Lithographic Properties of Positive Photosensitive Polyimide Insulator by Block Copolymerization.

Itatani

Komuro

Aoyagi

et al. 2001

J. Photopol. Sci. Technol.

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“…Recently, a new type of photosensitive polyimide material, synthesized by block copolymerization has reported for LSI circuit [1]. This polyimide dose not need the cure process, and can be handled with the temperature of about 100…”

Section: Introductionmentioning

confidence: 99%

X-Ray Detection Using Superconducting Tunnel Junctions With Polyimide Insulation Layer

Yoshida

Hoshino

Taino

et al. 2005

IEEE Trans. Appl. Supercond.

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We have fabricated Nb-based superconducting tunnel junctions (STJs) with Al trapping layers using the photosensitive polyimide insulation layer for X-ray detector. It is possible to simplify the fabrication process of the STJs, because the photosensitive polyimide is used as the insulation layer instead of conventional inorganic insulation films without an etching process in a vacuum chamber. The polyimide insulation layer expects to be stable for thermal cycling between 0.3 K and room temperature. The preliminary experiments of 5.9 keV radiation shows the energy resolution of 86 eV.

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“…Therefore, polyimide is extensively used, particularly in electronic packaging and LSI passivation layers. [1] Additionally, by conferring photosensitivity to polyimide, it is possible to simplify its patterning.…”

Section: Introductionmentioning

confidence: 99%

10-Gbps Signal Propagation of High-Density Wiring Interposer Using Photosensitive Polyimide for 3D Packaging

Kikuchi

Oosato

Segawa³

et al.

56th Electronic Components and Technology Conference 2006

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We have developed a high-density wiring interposer for 10-Gbps signal propagation using a photosensitive polyimide. We optimized the basic properties of the photosensitive polyimide film for the fabrication of the interposer. We experimentally confirmed that the high-density wiring interposer could be fabricated using the optimized polyimide and gold multilayered structure. Fine metal wirings were smoothly covered by the polyimide film, as confirmed by scanning electron microscopy (SEM) of the cross section of the fabricated balanced pair strip-line structure. From the high-resolution differential time domain reflectometry (TDR) measurement, the differential impedance Z diff of a 12.5-µm-wide 12.4-mm-long balanced-pair strip-line was evaluated to be within 100 Ω ± 14.6 %. From the high-resolution differential time domain transmission (TDT) measurement, an insertion loss (S-parameter: S dd21 ) of -2.96 dB at 10 GHz through the differential strip-line was evaluated. Finally, we confirmed eye diagram measurement at 10 Gbps through the differential strip-line on the fabricated interposer. The aperture size of the measured eye diagram at 10 Gbps was sufficient for ultrahigh-speed signal propagation. IntroductionWith the increase in the operational speed and integration density of LSI chips, high-performance digital electronic systems have been realized. The clock frequency of a CPU-LSI chip exceeds the GHz range. However, to realize a computing system with a higher performance, the high-speed signal propagation performance of not only the LSI chips of computing systems but also LSI packages and interconnects must be improved. To obtain high-speed signal transmission in LSI packages and interconnects, line impedances should be

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Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization

Cited by 10 publications

References 2 publications

Lithographic Properties of Positive Photosensitive Polyimide Insulator by Block Copolymerization.

Lithographic Properties of Positive Photosensitive Polyimide Insulator by Block Copolymerization.

X-Ray Detection Using Superconducting Tunnel Junctions With Polyimide Insulation Layer

10-Gbps Signal Propagation of High-Density Wiring Interposer Using Photosensitive Polyimide for 3D Packaging

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