Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption

Abstract

We report an international interlaboratory dual experiment to determine the calibration factor used to calculate the interstitial oxygen content of silicon from room‐temperature (300 K) infrared (IR) absorption measurements. We conducted round robins for both the infrared and the absolute measurements on the same or equivalent specimens. The calibration factor for computing the oxygen content of silicon in parts per million atomic (ppma) from a room‐temperature measurement of the absorption coefficient at 1107 cm−1 was determined to be 6.28±0.18 normalppma/cm−1 . The IR round robin showed a reproducibility on the order of 3%.

Origin of room-temperature photoluminescence around C-line in electron-irradiated Si and its applicability for quantification of carbon

“…The O i concentration was determined by the IR absorption method using the conversion factor of 3.14 × 10 17 cm −2 (IOC-88). 28) The spectrum at 18 K consists of the C-line at 0.789 eV (1572 nm), the G-line at 0.969 eV (1280 nm), and the TO-phonon sideband of the band-edge emission (I TO ). Its spectral shape is the same as that at 4.2 K except for the lack of impurity-bound exciton lines, where the excitons are released thermally from impurities at 18 K. As the temperature increases, the C-and G-lines remained detectable up to 160 and 120 K, respectively, with line broadening.…”

Method to detect carbon in silicon crystals in the concentration range down to 5 × 1014 cm−3 by Fourier transform infrared absorption at room temperature

“…The interstitial O concentration of the samples was measured by FT-IR using the conversion factor of 3.14 × 10 17 cm −2 . 19,20) We also prepared a reference sample of n-type undoped with the resistivity higher than 500 Ω•cm and with the carbon concentration of 1-2 × 10 14 cm −3 for the differential absorption spectroscopy. All the samples were mirror-polished with a thickness of 2.00 ± 0.01 mm and with a thickness uniformity of less than 0.001 mm.…”

Calibrations coefficients for determination of concentrations of vacancy-oxygen-related complexes and oxygen dimer in silicon by means of infrared absorption spectroscopy

“…where K α-Oi is a calibration coefficient and α 1107 is an absorption coefficient at the maximum of the band at 1107 cm -1 . The most widely used value of the calibration coefficient is K α-Oi = 3.14 • 10 17 cm -2 [2,3].…”

“…The IR absorption spectra in the wavenumber range 400-4000 cm -1 were measured using a Bruker IFS 113v spectrometer at temperatures of 20 and 300 K with a spectral resolution of 0.5 or 1 cm -1 , respectively. The concentrations of interstitial oxygen ([O i ] = 1 • 10 18 cm -3 ) and substitutional carbon ([C s ] = 2 • 10 16 cm -3 ) atoms were determined from measurements of intensities of absorption bands at 1107 and 605 cm -1 using calibration coefficients 3.14 • 10 17 cm -2 and 0.94 • 10 17 см -2 , respectively [2,3].…”