Calibrations coefficients for determination of concentrations of vacancy-oxygen-related complexes and oxygen dimer in silicon by means of infrared absorption spectroscopy
Abstract:Vacancy-oxygen complexes VnOm (n, m ≥ 1) in crystalline silicon are nucleation centers for oxygen precipitates, which are widely used as internal getters in modern technologies of production of silicon-based electronic devices and integrated circuits. For the controllable formation of oxygen precipitates in Si crystals in the technology processes the methods of determination of concentrations of the VnOm complexes are required. The aim of the present work was to find values of the calibration coefficients for … Show more
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