Interference photolithography with the use of resists on the basis of chalcogenide glassy semiconductors

Photoinduced etching of thin films of chalcogenide glassy semiconductors

“…Interference structures on the annealed ChGS films were recorded by their exposure to an interfer ence pattern [13] formed by the light of a helium-cad mium laser (wavelength λ = 440 nm). The profile shape of the raised elements and their size were deter mined with a Dimension 3000 Scanning Probe atomic force microscope (AFM) (Digital Instruments Inc.).…”

“…The photostimulated dissolution of chalcogenides occurs only at illuminated areas, which makes it pos sible to obtain deeply profiled masks and structures as a result of the absence of isotropic under etch, which occurs in the conventional lithographic technique with liquid etching, i.e., the given photoinduced liquid etching is an analog of the more labor expensive dry anisotropic etching in the conventional technology. To implement this opportunity, we formed a mask in the form of gold strips with a spatial frequency of 1300 mm -1 on the surface of an annealed As 40 S 30 Se 30 film by interference lithography [13]. Then, photo stimulated etching of the ChGS layer was performed through this mask.…”

“…In this study, we demonstrate for the first time that such tran sient structural changes are also accompanied by a change in chalcogenide solubility in a selective etchant, with ordinary etchants of negative action [12] dissolving illuminated areas of a chalcogenide film, i.e., being positive in the given process. This new pho toinduced effect enables a photolithographic process (including interference photolithography [13]) to occur, in which chalcogenide layers annealed at tem peratures close to the glass transition temperature of a chalcogenide glass of a given composition are simulta neously exposed to light and selectively etched.…”

Photostimulated etching of germanium chalcogenide films

“…Interference structures on the ChG films were recorded using their exposure to an interference pattern [16] formed by the light of a helium-cadmium laser (wavelength λ = 440 nm) with the holographic setup assembled in accord with the wave-amplitude division method. During exposure, these samples were also placed into the silica cuvette filled with selective etching solutions (Fig.…”

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist

“…In previous studies, the authors have shown that IL with the use of chalcogenide photoresist is a promising technology to form one-and two-dimensional submicron periodic structures on the surface of semiconductors and dielectrics [12]. Chalcogenide photoresists based on thermal evaporated amorphous films of chalcogenide glasses are characterized by high resolution, optical uniformity, wide spectral range of photosensitivity.…”