Interfacial reactions at Al/LiF and LiF/Al

Abstract

The interfaces of poly (p -phenylene vinylene) and fullerene derivatives with Al, LiF, and Al/LiF studied by secondary ion mass spectroscopy and x-ray photoelectron spectroscopy: Formation of AlF 3 disproved

Dependence Study of Optoelectronics Performance on Carefully Differed LiF Thickness in Alq<sub>3</sub> Based OLEDs

“…The subsequent observed phenomena include the LiF dissociation and Alq 3 anion for-mation with Li doping. The XPS results further indicate that this reaction does not occur at LiF/Al interface in the absence of Alq 3 , but in the presence of it [9]; (c) Bang bending model, which makes the band bended to a certain extent, leading it easier for electron to inject into the organic material [10]. The significance of these studies lies in that they each support one of the different categorized models.…”

“…A number of mechanisms have been proposed in the literatures, including: (a) the insulating buffer model, which attributes electron injection enhancement to the tunneling effect. The biased LiF layer would take a large electric field because of its excellent insulating property (with wide band gap of 12eV), and shift the electronic states of electrode to a higher level thus a more direct electron injection into the lowest unoccupied molecular orbital of the electron transporting material can be obtained [4][5][6]; (b) Chemical reaction model, in which chemical interaction takes place at the interface of LiF/Al or Aluminum 8-hydroxyquinolinate(Alq 3 )/LiF/Al [7][8][9]. The subsequent observed phenomena include the LiF dissociation and Alq 3 anion for-mation with Li doping.…”

Sign Control of Magnetoresistance Through Chemically Engineered Interfaces

“…[ 8,9,[19][20][21][22] The result of such a reaction is the formation of Li + and AlF 3 , as can be predicted by comparing the heats of formation of LiF and AlF 3 as Δ f H 0 (AlF 3 ) < Δ f H 0 (LiF). The Li + ions form a dipole layer at the metal/organic interface, which effectively shifts the vacuum level of the OS and lowers the barrier height for electrons, allowing the electrical current to be more effectively injected into the OS.…”

Simple approach for an electron extraction layer in an all-vacuum processed n-i-p perovskite solar cell

“…, Ag and Al). 31–33 These interfacial layers, however, do not efficiently work on transparent conducting oxides (TCOs) such as indium tin oxide (ITO), since the mechanism of the improved contact using the interfacial layers requires the contact with the metal layers to form a metal complex. 31–33 Hence, for n-i-p devices different solutions are needed.…”