Sign Control of Magnetoresistance Through Chemically Engineered Interfaces

Ciudad, David; Gobbi, Marco; Kinane, C. J.; Eich, Marius; Moodera, Jagadeesh S.; Hueso, Luis E.

doi:10.1002/adma.201401283

Cited by 37 publications

(43 citation statements)

References 27 publications

(32 reference statements)

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“…The interface energetics is one of the dominant factors governing the efficacy of a spinterface since the optimized energy level match will facilitate the carrier injection/extraction, thus the spin injection/extraction. LiF is also utilized as buffer layer in OSV with the ferromagnetic (FM) electrode to enhance device performance and make it more stable, or even to control the polarization of extracted spins and the sign of magnetoresistance . In the so‐called spin‐OLEDs, efficient electroluminescence demands carrier‐injection balance, which requires a good electron injection from FM cathode (electron is typically the minority carrier in general OLED and OSV structures).…”

Section: Introductionmentioning

confidence: 99%

Role of Thick‐Lithium Fluoride Layer in Energy Level Alignment at Organic/Metal Interface: Unifying Effect on High Metallic Work Functions

Sun

Shi

Bao

et al. 2015

Adv Materials Inter

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We have investigated the function of ~3 nm thick lithium fluoride (LiF) buffer layers in combination with high work function metal contacts such as coinage metals and ferromagnetic metals for use in organic electronics and spintronics. The energy level alignment at organic/LiF/metal interfaces is systematically studied using photoelectron spectroscopy and the integer charge transfer model. The thick-LiF buffer layer is found to pin the Fermi level to ~3.8 eV regardless of the work function of the initial metal due do energy level bending in the LiF layer caused by depletion of defect states. At 3 nm thickness, the LiF buffer layer provides full coverage, and the organic semiconductor adlayers are found to physisorb with the consequence that the energy level alignment at the organic/LiF interface follows the integer charge transfer model's predictions.2

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Section: Introductionmentioning

confidence: 99%

Role of Thick‐Lithium Fluoride Layer in Energy Level Alignment at Organic/Metal Interface: Unifying Effect on High Metallic Work Functions

Sun

Shi

Bao

et al. 2015

Adv Materials Inter

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“…In sample STe, which displays both surface and bulk Rashba bands, we performed spin polarized scans at fixed momenta (k 1, -k1) marked in panels 4f and 4g, along the equivalent ZU direction at 30 degrees with respect to kx. Even though 7 these are not the points where the Rashba splitting is maximized, for ± k1 only bulk bands B1,2 are expected to contribute to the photoemission signal at BE greater than 0.2 eV (see Figure 2a and 2b). The spin polarized spectra and corresponding spin-polarization are reported in panels 4b and 4c for k1, 4d and 4e for -k1.…”

mentioning

confidence: 98%

Ferroelectric Control of the Spin Texture in GeTe

et al. 2018

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The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin. Here, we provide the experimental demonstration of the correlation between ferroelectricity and spin texture. A surface-engineering strategy is used to set two opposite predefined uniform ferroelectric polarizations, inward and outward, as monitored by piezoresponse force microscopy. Spin and angular resolved photoemission experiments show that these GeTe(111) surfaces display opposite sense of circulation of spin in bulk Rashba bands. Furthermore, we demonstrate the crafting of nonvolatile ferroelectric patterns in GeTe films at the nanoscale by using the conductive tip of an atomic force microscope. Based on the intimate link between ferroelectric polarization and spin in GeTe, ferroelectric patterning paves the way to the investigation of devices with engineered spin configurations.

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“…However, it soon became apparent that molecules were playing another role beyond that of mere spin transport materials. For example, in experiments with vertical spin valves, many groups were reporting consistently negative magnetoresistance [16][17][18] . These results were striking, as they contradicted the well-established spin polarization sign of the ferromagnetic electrodes and the present knowledge at that time regarding spin transport 13 .…”

mentioning

confidence: 99%

Activating the molecular spinterface

2017

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The miniaturization trend in the semiconductor industry has led to the understanding that interfacial properties are crucial for device behaviour. Spintronics has not been alien to this trend, and phenomena such as preferential spin tunnelling, the spin-to-charge conversion due to the Rashba-Edelstein effect and the spin-momentum locking at the surface of topological insulators have arisen mainly from emergent interfacial properties, rather than the bulk of the constituent materials. In this Perspective we explore inorganic/molecular interfaces by looking closely at both sides of the interface. We describe recent developments and discuss the interface as an ideal platform for creating new spin effects. Finally, we outline possible technologies that can be generated thanks to the unique active tunability of molecular spinterfaces.

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Sign Control of Magnetoresistance Through Chemically Engineered Interfaces

Cited by 37 publications

References 27 publications

Role of Thick‐Lithium Fluoride Layer in Energy Level Alignment at Organic/Metal Interface: Unifying Effect on High Metallic Work Functions

Role of Thick‐Lithium Fluoride Layer in Energy Level Alignment at Organic/Metal Interface: Unifying Effect on High Metallic Work Functions

Ferroelectric Control of the Spin Texture in GeTe

Activating the molecular spinterface

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