Interfacial Reaction between Titanium Thin Films and Aluminum Nitride Substrates

Imanaka, Yoshihiko; Notis, Michael R.

doi:10.1111/j.1151-2916.1999.tb01953.x

Cited by 13 publications

(15 citation statements)

References 32 publications

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“…6,7 Phase-pure Ti 2 AlN was obtained at annealing temperatures beyond 800°C. 6,8 Work on epitaxial films was only published for Ti/ Al bilayers deposited onto AlGaN / GaN heterostructures, showing interfacial Ti 2 AlN and Ti 3 Al formation after annealing at 950°C for 80 min. 9 Here, we present results of in situ x-ray studies on epitaxial and phase-pure Ti 2 AlN formed by solid-state reaction between epitaxial AlN and Ti at annealing temperatures as low as 500°C in only 5 min.…”

mentioning

confidence: 99%

Topotaxial growth of Ti2AlN by solid state reaction in AlN∕Ti(0001) multilayer thin films

Höglund

Beckers

Schell

et al. 2007

Applied Physics Letters

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The formation of Ti 2 AlN by solid state reaction between layers of wurtzite-AlN and ␣-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al 2 O 3 ͑0001͒ at 200°C yielded smooth, heteroepitaxial ͑0001͒ oriented films, with abrupt AlN / Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400°C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti 3 AlN. Further annealing at 500°C resulted in a phase transformation into Ti 2 AlN͑0001͒ after only 5 min.

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mentioning

confidence: 99%

Topotaxial growth of Ti2AlN by solid state reaction in AlN∕Ti(0001) multilayer thin films

Höglund

Beckers

Schell

et al. 2007

Applied Physics Letters

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“…The demanding flow control can, however, be circumvented by solid-state reactions in Ti/AlN diffusion couples. Ti 2 AlN formation, with concurrent Ti 3 AlN, Ti 3 Al, and TiN, was demonstrated with this approach in polycrystalline Ti/AlN diffusion couples at annealing temperatures above 800°C [10,11]. Topotaxial reactions in heteroepitaxial (0001) oriented Ti/AlN diffusion couples lower the phase transformation temperature for phase-pure Ti 2 AlN(0001) to 500°C [12].…”

Section: Introductionmentioning

confidence: 89%

Ti2Al(O,N) formation by solid-state reaction between substoichiometric TiN thin films and Al2O3 (0001) substrates

et al. 2011

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This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and education use, including for instruction at the authors institution and sharing with colleagues.Other uses, including reproduction and distribution, or selling or licensing copies, or posting to personal, institutional or third party websites are prohibited. Titanium nitride TiN x (0.1 ≤ x ≤ 1) thin films were deposited onto Al 2 O 3 (0001) substrates using reactive magnetron sputtering at substrate temperatures (T s ) ranging from 800 to 1000°C and N 2 partial pressures (pN 2 ) between 13.3 and 133 mPa. It is found that Al and O from the substrates diffuse into the substoichiometric TiN x films during deposition. Solid-state reactions between the film and substrate result in the formation of Ti 2 O and Ti 3 Al domains at low N 2 partial pressures, while for increasing pN 2 , the Ti 2 AlN MAX phase nucleates and grows together with TiN x . Depositions at increasingly stoichiometric conditions result in a decreasing incorporation of substrate species into the growing film. Eventually, a stoichiometric deposition gives a stable TiN(111) || Al 2 O 3 (0001) structure without the incorporation of substrate species. Growth at T s 1000°C yields Ti 2 AlN(0001), leading to a reduced incorporation of substrate species compared to films grown at 900°C, which contain also Ti 2 AlN(101 ̅ 3) grains. Finally, the Ti 2 AlN domains incorporate O, likely on the N site, such that a MAX phase oxynitride Ti 2 Al(O,N) is formed. The results were obtained by a combination of structural methods, including X-ray diffraction and (scanning) transmission electron microscopy, together with spectroscopy methods, which comprise elastic recoil detection analysis, energy dispersive X-ray spectroscopy, and electron energy loss spectroscopy.

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“…Some previous studies regarding the thin‐film metallization of AlN have been published 15–19 . As far as the interface reaction between the Ti thin film and the AlN substrate was concerned, Westwood and Notis 15,16 found the formation of TiN and TiAl 3 at the interface after annealing at 600°C for 30 min in an oxygen‐free sample.…”

Section: Introductionmentioning

confidence: 99%

“…deposited a Ti thin film on AlN with radio frequency (rf) sputtering, revealing that under an argon atmosphere, TiAl 3 was formed at 700°C for 60 min, and TiAl 3 , Ti 2 N, and TiN were detected after annealing at 830°C for 60 min by using XRD. In the study of the interdiffusion and reaction of Ti (thin film) and AlN (substrate) using RBS and transmission electron microscopy (TEM), Imanaka and Notis 19 found Ti 2 AlN at the interface after annealing at 800°–950°C. Recently, Pinkas et al 24 .…”

Section: Introductionmentioning

confidence: 99%

Microstructural Characterization and Phase Development at the Interface Between Aluminum Nitride and Titanium After Annealing at 1300°–1500°C

Chiu

Lin

2006

Journal of the American Ceramic Society

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Diffusion couples of aluminum nitride (AlN) and Ti were annealed under an argon atmosphere at temperatures ranging from 1300° to 1500°C for 0.5–36 h. The morphologies, crystal structures, and chemical compositions of the reaction zones at AlN/Ti interfaces were characterized using analytical scanning electron microscopy and analytical transmission electron microscopy. An interfacial reaction zone, consisting of TiN, τ2‐Ti2AlN, τ1‐Ti3AlN, α2‐Ti3Al, and a two‐phase (α2‐Ti3Al+α‐Ti) region in sequence, was observed in between AlN and Ti after annealing at 1300°C. The α2‐Ti3Al region revealed equiaxed and elongated morphologies with and . In the two‐phase (α2‐Ti3Al+α‐Ti) region, α2‐Ti3Al and α‐Ti were found to satisfy the following orientation relationship:and. The γ‐TiAl and a lamellar two‐phase (γ‐TiAl+α2‐Ti3Al) structure, instead of τ1‐Ti3AlN, were found in between τ2‐Ti2AlN and α2‐Ti3Al after annealing at 1400°C. The orientation relationship of γ‐TiAl and α2‐Ti3Al in the lamellar structure was identified to be as follows:and. Compared with the reaction zone after annealing at 1400°C, the γ‐TiAl was not found at the interface after annealing at 1500°C. The microstructural development resulting from isothermal diffusion at 1300°C and subsequent cooling at the interface are explained with the aid of the Ti–Al–N ternary phase diagram and a modified Ti–Al binary phase diagram.

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Interfacial Reaction between Titanium Thin Films and Aluminum Nitride Substrates

Cited by 13 publications

References 32 publications

Topotaxial growth of Ti2AlN by solid state reaction in AlN∕Ti(0001) multilayer thin films

Topotaxial growth of Ti2AlN by solid state reaction in AlN∕Ti(0001) multilayer thin films

Ti2Al(O,N) formation by solid-state reaction between substoichiometric TiN thin films and Al2O3 (0001) substrates

Microstructural Characterization and Phase Development at the Interface Between Aluminum Nitride and Titanium After Annealing at 1300°–1500°C

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