Interfacial layer formation in Gd2O3 films deposited directly on Si(0 0 1)

Gupta, J. A.; Landheer, D.; Sproule, G. I.; McCaffrey, J. P.; Graham, M. J.; Yang, Kuo-Cheng; Lu, Zheng‐Hong; Lennard, W. N.

doi:10.1016/s0169-4332(01)00014-9

Cited by 57 publications

(29 citation statements)

References 22 publications

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“…[2][3][4][5][6] Gd 2 O 3 is a wide band gap oxide (5.37-6.36 eV) [6,7] with permittivity values of 10-14 for the epitaxial cubic phase. [8][9][10][11] Recently, Gd 2 O 3 has gained considerable interest as a potential candidate for high-permittivity (high-j) dielectric oxide in order to replace the SiO 2 dielectric in future silicon-based transistors, [8,[12][13][14][15][16][17][18][19] or capacitive sensors. [20] In addition, Gd 2 O 3 has been considered as a gate oxide in germanium-based MOS devices, [7] and also a promising dielectric for III-V electronics, e.g., as a passivation layer for GaAs-based electronic devices.…”

Section: Introductionmentioning

confidence: 99%

“…[9,21] Using NiSi metal gates on Gd 2 O 3 grown on Si, it has been possible to achieve equivalent oxide thicknesses as low as 0.86 nm. [10] Gd 2 O 3 films can be grown by several techniques such as the sol-gel method, [2] electron beam evaporation (EBE), [4,6,9,13,14,17] sputtering, [12] ion-beam epitaxy, [5] molecular beam epitaxy (MBE), [10,19,21] oxidation of Gd metal films, [16,20,22] metal-organic (MO)CVD, [15,23] and ALD. [24][25][26] The growth techniques available may be distinguished on the basis of optimum deposition temperatures and suitability for large area substrate processing.…”

Section: Introductionmentioning

confidence: 99%

“…EBE samples seem to require deposition temperatures exceeding 450-500°C in order to produce well-performing dielectric and insulating films. [9,13,14] In some cases of ultrathin (2.8-5.3 nm) film growth, the films were deposited at 250°C with an obligatory post-deposition long-term anneal at 400°C. [17] Analogous demand for high deposition temperatures and/or annealings applies to ion-beam deposited and MBE-grown films, as well as to sol-gel technology.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Atomic Layer Deposition of Gadolinium Oxide Films

Kukli

Hatanpää

Ritala

et al. 2007

Chemical Vapor Deposition

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Thin cubic Gd 2 O 3 films are grown by atomic layer deposition (ALD), in the temperature range 300-400°C, using a novel tris(2,3-dimethyl-2-butoxy)gadolinium(III) precursor, Gd[OC(CH 3 ) 2 CH(CH 3 ) 2 ] 3 , and water. The films are crystalline in their as-deposited state. The films contain some residual hydrogen and carbon, and are probably oxygen-deficient in the as-deposited state, causing flat-band shifts in Gd 2 O 3 -based metal-oxide-semiconductor (MOS) capacitor structures. On the other hand, the permittivity of Gd 2 O 3 dielectric layers reaches 16, approximately, when calculated from the relationship between equivalent and physical oxide thicknesses, and breakdown fields as high as 8 MV cm -1 .

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Atomic Layer Deposition of Gadolinium Oxide Films

Kukli

Hatanpää

Ritala

et al. 2007

Chemical Vapor Deposition

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“…In spite of numerous study of REO as an insulator in MOS structure [1][2][3][4][5][6][7][8][9][10][11][12], the study of characteristics and growth of Eu 2 O 3 on Si substrate is very few [13,14].…”

Section: Introductionmentioning

confidence: 99%

Poole‐Frenkel electrical conduction in europium oxide films deposited on Si(100)

Dakhel¹

2003

Cryst. Res. Technol.

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Thin Eu 2 O 3 films were prepared on Si (P) substrates to form MOS devices. The oxide crystal structure was determined by X-ray diffraction (XRD). The electrical transport properties of the devices with amorphous and crystalline Eu oxide were investigated. The current-voltage and current-temperature characteristics suggest a Poole-Frenkel (PF) type mechanism of carrier transport through the device when the applied field is more than 105 V/cm. A deviation from PF leakage current course was found and attributed to the current carrier trapping. We have also observed that, the dielectric spectra of MOS structure are different when the insulator is an amorphous or crystalline thin film. From which we calculate the relaxation time (τ) of the interface (insulator/semiconductor) dipoles.

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“…Gd 2 O 3 has been deposited by physical vapor deposition (PVD) techniques such as ultra-high vacuum vapor deposition [11] and electron-beam evaporation. [14,15] However, metal±organic (MO)CVD has a number of potential advantages over PVD. These include large-scale production capability, good composition control, high film densities, high deposition rates, and excellent conformal step coverage.…”

Section: Introductionmentioning

confidence: 99%

Growth of Neodymium Oxide This Films by Liquid Injection MOCVD Using a New Neodymium Alkoxide Precursor

Aspinall

Gaskell

Loo

et al. 2004

Chemical Vapor Deposition

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x , have been deposited by liquid injection MOCVD using the volatile gadolinium alkoxide precursor, [Gd(mmp) 3 ] (mmp = 1-methoxy-2-methyl-2-propanolate, OCMe 2 CH 2 OMe). Carbon-free GdO x films were grown over a wide range of substrate temperatures (300±600 C) on both Si(100) and GaAs(100) substrates. X-ray diffraction (XRD) data indicated that GdO x films grown on Si(100) were amorphous at low deposition temperatures, and crystalline with a C-type structure at growth temperatures of 450 C and above. GdO x films grown on GaAs at 450 C showed a strong preferred orientation, dominated by the (222) reflection.

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Interfacial layer formation in Gd2O3 films deposited directly on Si(0 0 1)

Cited by 57 publications

References 22 publications

Atomic Layer Deposition of Gadolinium Oxide Films

Atomic Layer Deposition of Gadolinium Oxide Films

Poole‐Frenkel electrical conduction in europium oxide films deposited on Si(100)

Growth of Neodymium Oxide This Films by Liquid Injection MOCVD Using a New Neodymium Alkoxide Precursor

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