Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

Luna, E.; Satpati, Biswarup; Rodriguez, J. B.; Баранов, А. Н.; Tournié, E.; Trampert, A.

doi:10.1063/1.3291666

Cited by 49 publications

(43 citation statements)

References 14 publications

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“…Recently Hulko et al [2,3] and Luna et al [4][5][6] have shown empirically that experimental concentration profiles in III-V two-dimensional (2D) heterostructures, e.g. quantum wells (QW) grown by molecular beam epitaxy (MBE), can be accurately reproduced by a sigmoidal function of the form x(z) = x 0 /[1 + exp(−z/L)].…”

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confidence: 99%

Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

Luna

Guzmán²,

Trampert³

et al. 2012

Phys. Rev. Lett.

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We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by twodimensional island formation, wherein cooperative effects are described by a specific functional dependence of the sticking coefficient on the surface coverage. Experimental results confirm that, except in the very early stages, island growth prevails over nucleation as the mechanism governing the interface development and ultimately determines the sigmoidal shape of the chemical profile in these two-dimensional grown layers. In agreement with our experimental findings, the model also predicts a minimum value of the interfacial width, with the minimum attainable value depending on the chemical identity of the species. A central goal of modern materials physics is the control of interfaces down to the atomic level. In particular, the behavior of layered materials depends on the atomicscale structural roughness and chemical mixing across the interface [1]. Although abrupt interfaces between conventional semiconductors (such as III-V compounds) are fabricated and element profiles across these interfaces are obtained with atomic resolution, the relation between the layer growth processes and the parameters governing the interface formation and evolution is not satisfactorily understood. In this respect, there is an ongoing discussion about how interfaces can be quantitatively described on the basis of a growth model and whether there is a minimum interface width.Recently Hulko et al. [2,3] and have shown empirically that experimental concentration profiles in III-V two-dimensional (2D) heterostructures, e.g. quantum wells (QW) grown by molecular beam epitaxy (MBE), can be accurately reproduced by a sigmoidal function of the formHere, x 0 denotes the nominal mole fraction of one of the species, z is the position across the interface along the growth direction, and L is the parameter quantifying the interface width (L is proportional to the widely reported length W , over which the concentration changes from 10% to 90% of its plateau value). Moreover, the accuracy of the sigmoidal fitting seems to be independent of the experimental technique used to obtain the element distribution [2,5,7] and, more interestingly, of the compound semiconductor. In this letter, we show that a sigmoidal profile emerges from a simple model of cooperative growth with 2D island formation. Furthermore, the use of a generalized sigmoidal expression gives a reliable and systematic quantification of the chemical interface. It sheds light on basic aspects of the early stages of heteroepitaxial growth, and permits to find a correlation between the profile and the interface properties in morphologically perfect epitaxial layers [8], which have been grown in the thermodynam...

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confidence: 99%

Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

Luna

Guzmán²,

Trampert³

et al. 2012

Phys. Rev. Lett.

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“…4(b), both As and In atom fractions decrease gradually from NW core to shell edge. The growth conditions of core/shell NWs have not been optimized so that the interface between core and shell layers is not very sharp [38][39][40]. Secondly, InAs surface may decompose durinig the cooling step before the GaSb growth.…”

Section: Fig 1(a) Shows An Sem Image Of Inas Nws Grown In the Verticalmentioning

confidence: 98%

Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates

Yang

Zhang

et al. 2015

Journal of Crystal Growth

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“…As already reported in Ref. 12, qDFTEM analysis of the chemical interface in NCA heterostructures relies on the analysis of two-beam DFTEM images obtained with the diffraction vector g ¼ 002, which is sensitive to the chemical composition for semiconductors with zincblende structure. In short, the method is based on the proposal of a distribution profile for the different constituent elements that we put into the calculation of the corresponding diffracted intensity under kinematic conditions (I 002 ).…”

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confidence: 99%

“…Based on the analysis of the intensity contrast of g 002 dark-field transmission electron microcopy (DFTEM) micrographs, Luna and co-workers have recently proposed a method for the quantitative evaluation of the chemical intermixing at the interfaces of InAs/GaSb superlattices, which includes segregation effects. 12 The procedure, however, has not yet been applied to the analysis of the chemical interface in nanostructures, e.g., across QDs per se or across WLs. In this work, we apply our quantitative DFTEM (qDFTEM) method to the chemical characterization of the interface in a Sb-based non-commonatom (NCA) WL.…”

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Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots

Luna

Beltrán

Sánchez

et al. 2012

Applied Physics Letters

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Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

Cited by 49 publications

References 14 publications

Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates

Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots

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