Interfacial Interaction Enables Enhanced Mobility in Hybrid Perovskite‐Conjugated Polymer Transistors with High‐k Fluorinated Polymer Dielectrics

Abstract

The charge carrier mobility of organic field‐effect transistors (OFETs) has been remarkably improved through several engineering approaches and techniques by targeting pivotal parts. Herein, an ultrathin perovskite channel layer that boosts the field‐effect mobility of conjugated polymer OFETs by forming perovskite‐conjugated polymer hybrid semiconducting channel is introduced. The optimized lead‐iodide‐based perovskite‐conjugated polymer hybrid channel transistors show enhanced hole mobility of over 4 cm2 V–1 s–1 (average = 2.10 cm2 V–1 s–1) with high reproducibility using a benchmark poly(3‐hexylthiophene) (P3HT) polymer and employing high‐k fluorinated polymer dielectrics. A significant hole carrier mobility enhancement of ≈200–400% in benzo[1,2‐b:4,5:b′]dithiophene (BDT)‐based conjugated polymers is also demonstrated by exploring certain interactive groups with perovskite. This significant enhancement in the transistor performance is attributed to the increased charge carrier density in the hybrid semiconducting channel and the perovskite–polymer interactions. The findings of this paper demonstrate an exceptional engineering approach for carrier mobility enhancement in hybrid perovskite‐conjugated‐polymer‐based electronic devices.

Hole Mobility Enhancement in Benzo[1,2‐b:4,5‐b']Dithiophene‐Based Conjugated Polymer Transistors through Directional Alignment, Perovskite Functionalization and Solid‐State Electrolyte Gating

“…This drastic improvement in the hole mobility of our conjugated polymer-capped perovskite OFETs compared to that of the control OFETs could be attributed to efficient bilayer channel formation and induction of a high charge carrier density in the hybrid perovskite-functionalized organic transistor channel due to the high-capacitance electrolyte dielectric and polymer-perovskite interactions. [30,31,44]…”

“…[30,31] To improve the performance of OFETs, it is necessary to optimize the pivotal parts, including the contact electrodes, gate dielectric, and the active semiconducting layer. [35,36] Highcapacitance gate dielectric materials, such as cross-linked insulating polymers, [37][38][39] ionic composites, [40][41][42] high-k materials, [43][44][45] and polymer electrolytes, [46][47][48] have evolved for transistor technology. In this study, motivated by these early studies, we synthesized benzo[1,2-b:4,5-b']dithiophene-based conjugated polymer for high-performance OFETs and conjugated polymer-capped perovskite transistors using conventional and electrolyte gating media.…”

Organic–inorganic hybrid perovskite materials and their application in transistors

“…The enhancement of mobility was attributed to the perovskite-conjugated polymer interactions, such as the passivation of defects on perovskite surfaces. 131 Subsequently, they widen the range of perovskites. Hybrid perovskites such as FAPbI 3 and FA 0.2 MA 0.8 PbI 3 were also applied.…”

Long-range polymer ordering by directional coating to remarkably enhance the charge carrier mobility in PCDTPT-based organic field-effect transistors

“…Fabrication of solution-processed polymer FETs is a low-cost solution for applications like flexible displays, healthcare and large-area electronics but this method increases the level of polymer disorder. Furthermore, device mobility strongly depends upon solvent, solution concentration, deposition temperature, post-deposition annealing temperature and deposition method [16,21–23]. All these factors affect the molecular packing of deposited material.…”