Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures

Abstract

Heterostructures of two-dimensional (2D) van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe because of the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltagedependent conductance decay rate is also observed. We relate these observations to the gate voltage-dependent dynamical charge transfer between InSe and GaSe layers.

Spontaneous Enhanced Visible-Light-Driven Photocatalytic Water Splitting on Novel Type-II GaSe/CN and Ga2SSe/CN vdW Heterostructures

“…Among them, GaSe and Ga 2 SSe show great potential in photocatalytic hydrogen production and oxygen production due to their wide-band-gap properties. In the experiment, Kumar et al used the Bridgman method to grow GaSe bulk crystals and then peeled off the nanosheets by using the mechanical peeling method . The photocatalytic decomposition of water by a single-layer semiconductor can greatly simplify the reaction system, but the separation of electrons and holes is easy to recombine inside the material, which reduces the photoelectric conversion efficiency. , Therefore, some methods are proposed to reduce the efficiency loss, such as doping elements ,, or constructing heterostructures − to suppress the charge recombination.…”

P Doping Promotes the Spontaneous Visible-Light-Driven Photocatalytic Water Splitting in Isomorphic Type II GaSe/InS Heterostructure

“…As another III–VI chalcogenide, GaSe also shows great potential in the field of optoelectronics. − What’s more important is that InS and GaSe have been successfully synthesized in experiments. Single crystal GaSe can be prepared on a single crystal silicon substrate by the chemical vapor deposition (CVD) or atomic layer deposition (ALD) method. , Because of the same crystal type and similar lattice parameters, GaSe and InS nanosheets can be prepared by replacing the reaction source gas and forming films by CVD twice. Hence, the GaSe/InS heterostructure is easier to be fabricated than other heterostructures.…”

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

“…To determine the dominant contribution of the charge transfer, we designed a simple model and calculated the decay time using the following equation, which has been reported in previous studies: [9,10]…”