Interface thermal conductance and the thermal conductivity of multilayer thin films

Cahill, David G.; Bullen, Andrew J.; Lee, S.-M.

doi:10.1068/htwi9

Cited by 86 publications

(46 citation statements)

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“…A thin film is often incorporated between the substrate and heater line, so there are two relevant TBCs in series. The substrate should have high k. In one approach, the thermal response is measured as a function of the film thickness (whose k must remain constant), allowing for a subsequent separation between interface and bulk contributions (76,79). If the intervening thin film is sufficiently thin and conductive ( film d h ⋅ ≪ film k ), the simpler differential 3ω method, which compares a pair of measurements with and without the film, may be used (76,79,80).…”

Section: ω and Related Electrothermal Methodsmentioning

confidence: 99%

Thermal Boundary Conductance: A Materials Science Perspective

Monachon

Weber

Dames

2016

Annu. Rev. Mater. Res.

197

140

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The thermal boundary conductance (TBC) of materials pairs in atomically intimate contact is reviewed as a practical guide for materials scientists. First, analytical and computational models of TBC are reviewed. Five measurement methods are then compared in terms of their sensitivity to TBC: the 3ω method, frequency-and time-domain thermoreflectance, the cut-bar method, and a composite effective thermal conductivity method. The heart of the review surveys 30 years of TBC measurements around room temperature, highlighting the materials science factors experimentally proven to influence TBC. These factors include the bulk dispersion relations, acoustic contrast, and interfacial chemistry and bonding. The measured TBCs are compared across a wide range of materials systems by using the maximum transmission limit, which with an attenuated transmission coefficient proves to be a good guideline for most clean, strongly bonded interfaces. Finally, opportunities for future research are discussed.

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Section: ω and Related Electrothermal Methodsmentioning

confidence: 99%

Thermal Boundary Conductance: A Materials Science Perspective

Monachon

Weber

Dames

2016

Annu. Rev. Mater. Res.

197

140

View full text Add to dashboard Cite

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“…1,2 A number of recent experimental 3,4,5,6,7,8,9 and theoretical 10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35 studies contributes to an emerging understanding of interesting science issues and potential technology problems.…”

Section: Introductionmentioning

confidence: 99%

Phonon Knudsen flow in nanostructured semiconductor systems

Ziambaras¹,

Hyldgaard²

2006

Journal of Applied Physics

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We determine the size effect on the lattice thermal conductivity of nanoscale wire and multilayer structures formed in and by some typical semiconductor materials, using the Boltzmann transport equation and focusing on the Knudsen flow effect. For both types of nanostructured systems we find that the phonon transport is reduced significantly below the bulk value by boundary scattering off interface defects and/or interface modes. The Knudsen flow effects are important for almost all types of semiconductor nanostructures but we find them most pronounced in Si and SiC systems due to the very large phonon mean-free paths. We apply and test our wire thermal-transport results to recent measurements on Si nanowires. We further investigate and predict size effects in typical multilayered SiC nanostructures, for example, a doped-SiC/SiC/SiO 2 layered structure that could define the transport channel in a nanosize transistor. Here the phonon-interface scattering produces a heterostructure thermal conductivity smaller than what is predicted in a traditional heat-transport calculation, suggesting a breakdown of the traditional Fourier analysis even at room temperatures. Finally, we show that the effective thermal transport in a SiC/SiO 2 heterostructure is sensitive to the oxide depth and could thus be used as an in-situ probe of the SiC oxidation progress.

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“…(7), ω is an angular frequency of phonons. It has been well known that neither of them agrees with the experimental data except for an extremely low temperature region although both models give rather similar predictions for many cases [6,18,19,33]. Moreover, these models are too complicate to handle easily for an engineering use.…”

Section: -2 Existing Models For Thermal Boundary Resistance (Tbr)mentioning

confidence: 58%

Thermal boundary resistance at an epitaxially perfect interface of thin films

Choi

Maruyama

2005

International Journal of Thermal Sciences

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At the interfaces in an ideal epitaxial superlattice, it may be expected that there exists no thermal boundary resistance (TBR) due to thermal motions because the interfaces are atomically perfect. However, recent researches reported that the TBR still exists at the epitaxial interfaces of superlattices. Our previous study suggested the model, which was named as the C-M model, to predict accurately the TBR at an interface by considering a mass ratio between two species. In this study, we incorporated the effect due to an intermolecular potential well ratio into the previous model. The updated C-M model was based on the classical theory of a wave reflection and transmission, and provided an excellent agreement with the results of the molecular dynamics (MD) simulation. Furthermore, it suggests no TBR condition at an interface in superlattices.

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Interface thermal conductance and the thermal conductivity of multilayer thin films

Cited by 86 publications

References 0 publications

Thermal Boundary Conductance: A Materials Science Perspective

Thermal Boundary Conductance: A Materials Science Perspective

Phonon Knudsen flow in nanostructured semiconductor systems

Thermal boundary resistance at an epitaxially perfect interface of thin films

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