Interface Study on the Effect of Carbon and Boron Carbide Diffusion Barriers in Sc/Si Multilayer System

Zhu, Jingtao; Zhang, Jiayi; Jiang, Hui; Zhu, Shengming; Li, Miao; Ji, Bin; Zhao, Jiaoling

doi:10.1021/acsami.0c03563

Cited by 10 publications

(5 citation statements)

References 24 publications

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“…Therefore, suppression or even full illumination of the intermixing is crucial for the improvement of the reflectivity of PMMs. In addition, the knowledge about intermixing mechanisms in Sc/Si and Co/C PMMs developed in early studies [37][38][39] allowed suppression of the intermixing by introducing diffusion barriers and improved the temperature stability of PMMs [41][42][43]. In addition to the intermixing, the interface roughness is another fac reflectivity.…”

Section: Structural and Optical Propertiesmentioning

confidence: 99%

Multilayer Reflective Coatings for BEUV Lithography: A Review

Uzoma

Salman

et al. 2021

Nanomaterials

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The development of microelectronics is always driven by reducing transistor size and increasing integration, from the initial micron-scale to the current few nanometers. The photolithography technique for manufacturing the transistor needs to reduce the wavelength of the optical wave, from ultraviolet to the extreme ultraviolet radiation. One approach toward decreasing the working wavelength is using lithography based on beyond extreme ultraviolet radiation (BEUV) with a wavelength around 7 nm. The BEUV lithography relies on advanced reflective optics such as periodic multilayer film X-ray mirrors (PMMs). PMMs are artificial Bragg crystals having alternate layers of “light” and “heavy” materials. The periodicity of such a structure is relatively half of the working wavelength. Because a BEUV lithographical system contains at least 10 mirrors, the optics’ reflectivity becomes a crucial point. The increasing of a single mirror’s reflectivity by 10% will increase the system’s overall throughput six-fold. In this work, the properties and development status of PMMs, particularly for BEUV lithography, were reviewed to gain a better understanding of their advantages and limitations. Emphasis was given to materials, design concepts, structure, deposition method, and optical characteristics of these coatings.

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Section: Structural and Optical Propertiesmentioning

confidence: 99%

Multilayer Reflective Coatings for BEUV Lithography: A Review

Uzoma

Salman

et al. 2021

Nanomaterials

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show abstract

“…Therefore, suppression or even full illumination of the intermixing is crucial for the improvement of the reflectivity of PMMs. Besides, the knowledge about intermixing mechanisms in Sc/Si and Co/C PMMs developed in early studies [37] [38] [39] allowed suppression of the intermixing by introducing diffusion barriers and improve the temperature stability of PMMs [41] [42,43]. [44] with permission from Elsevier.…”

Section: Structural and Optical Propertiesmentioning

confidence: 99%

Multilayer Reflective Coatings for BEUV Lithography: A Review

Uzhoma¹,

Shabir²,

Hu³

et al. 2021

Preprint

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The development of microelectronics is always driven by reducing transistor size and increasing integration, from the initial micron-scale to the current few nanometers. The photolithography technique for manufacturing the transistor needs to reduce the wavelength of the optical wave, from ultraviolet, deep, to the existing extreme ultraviolet light. One approach toward decreasing the working wavelength is using lithography based on beyond extreme ultraviolet radiation (BEUV) with a wavelength around 7 nm. The BEUV lithography relies on advanced reflective optics such as periodic multilayer film X-ray mirrors (PMMs). PMMs are artificial Bragg crystals having alternate layers of “light” and “heavy” materials. The periodicity of such a structure is relatively half of the working wavelength. Since a BEUV lithographical system contains at least 10 mirrors, optics’ reflectivity becomes a crucial point. The increasing of a single mirror's reflectivity by 10% will increase the system’s overall throughput by 6 times. In this work, the properties and development status of PMMs, particularly for BEUV lithography, were reviewed to gain a better understanding of their advantages and limitations. Emphasis was given to materials, design concepts, structure, deposition method, and optical characteristics of these coatings.

show abstract

“…To date, there have not been many reports comparing how the interfacial microstructure evolves or the layer contrast is restored when C or B 4 C is introduced to a particular material combination. Recently, 26 Zhu et al reported a comparison between 0.9 nm thicknesses C and B 4 C BL on a Sc/Si ML of bilayer with a thickness of 23.2 nm, and they found distinct differences between the interfaces in as-deposited as well as as-annealed samples. However, these are high-bilayer-thickness MLs with applications in 35–50 nm X-rays.…”

Section: Introductionmentioning

confidence: 99%