Interface studies by simulation on methylammonium lead iodide based planar perovskite solar cells for high efficiency

Jeyakumar, R.; Bag, Atanu; Nekovei, Reza; Radhakrishnan, R.

doi:10.1016/j.solener.2019.07.097

Cited by 29 publications

(5 citation statements)

References 43 publications

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“…As shown in Figure 9 (a), V OC is constant and independent of carrier concentration, which indicates that there are very few minority carriers in the HTL as photogenerated electrons in the absorber layer are effectively blocked by the sufficiently high potential formed by the high CBO at the HTL/WSe 2 interface, see Figure 3 (b). This finding also confirms that due to favorable band alignment at the HTL/absorber interface, Cu 2 O:N HTL effectively blocks electrons and only accepts holes from the absorber [ 82 ] (see Figure 3 (b)). Between lightly-doped and highly-doped HTL, the main differences in cell performance are the J SC and FF.…”

Section: Resultssupporting

confidence: 73%

Performance analysis of WSe2-based bifacial solar cells with different electron transport and hole transport materials by SCAPS-1D

Rahman¹

2022

Heliyon

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Section: Resultssupporting

confidence: 73%

Performance analysis of WSe2-based bifacial solar cells with different electron transport and hole transport materials by SCAPS-1D

Rahman¹

2022

Heliyon

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“…parameters for the materials are defined in the simulation and reported elsewhere. 19 In the absorption layer, Gaussian-like distribution is more appropriate to describe the defect states. 20 Defects are located 0.6 eV above the top of the valance band with a density of 1 9 10 17 /cm 3 ; characteristic energy of 0.1 eV is considered, and the electron and hole capture cross section is set to 1 9 10 14 /cm 2 .…”

Section: Device Structure and Simulation Detailsmentioning

confidence: 99%

Influence of Electron Transport Layer (TiO2) Thickness and Its Doping Density on the Performance of CH3NH3PbI3-Based Planar Perovskite Solar Cells

Jeyakumar

Bag

Nekovei

et al. 2020

Journal of Elec Materi

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Simulation studies are vital to understanding solar cell performance and in optimal device design for high-efficiency solar cells. Cell performance is sensitive to many factors, including device architecture, energy band alignment at the interfaces, materials used for photogeneration, charge extraction, doping density and thickness of various layers. The role of electron transport layer (ETL) thickness and its doping density on device performance is explored in this work. As the ETL thickness is increased from 10 nm to 200 nm, both fill factor (FF) and efficiency remain high up to 40 nm, at 0.85 and 28.04%, respectively, and beyond 40 nm, they decrease gradually due to a sharp increase in series resistance, reaching zero at 200 nm. However, J sc and V oc remained unchanged up to an ETL thickness of about 150 nm and 160 nm, respectively. These results were confirmed by contour plots of the simulated V oc , J sc , FF and efficiency results. We observed that when ETL approached 200 nm, J sc and V oc decreased to zero and 0.88 V, respectively. This can be attributed to very high series resistance and recombination in the cell. Donor concentration variation in the ETL from 10 17 /cm 3 to 10 20 /cm 3 has much less impact on J sc , and V oc remains unchanged. However, fill factor and efficiency improved, which might be due to an increase in conductivity in the ETL. Our result shows that for an optimized device, with an AM 1.5 spectrum, a cell efficiency of 29.64% was achieved with V oc , J sc and fill factor of 1.241 V, 28.70 mA/cm 2 and 0.83, respectively.

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“…The movement of the charge carriers depends on the electric field at the interface of the absorber. Employing ETLs and HTLs in the device provides an additional mechanism to enhance carrier collection by functioning as blocking layers for electrons and holes . The EB discontinuity at interfaces ETL/absorber and absorber/HTL can result in interfacial recombination, which directly affects the device efficiency.…”

Section: Resultsmentioning

confidence: 99%

Design Insights and Photovoltaic Performance Analysis of Non-Lead Inorganic RbSnX₃ (X = I, Br, Cl) Perovskites through Coupled Density Functional Theory and SCAPS-1D Simulation Frameworks

Ravidas,

Roy,

Samajdar

2024

ACS Appl. Electron. Mater.

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The development of lead (Pb)-free perovskite solar cells (PSCs) addresses the stability, commercialization, environmental, and health challenges associated with Pb-based PSCs. In the current research, Pb-free rubidium (Rb)-based perovskites RbSnX 3 (X = I, Br, Cl) were investigated through density functional theory (DFT) using the WIEN2K code and SCAPS-1D tool for analysis of photovoltaic (PV) applications. We computed the optoelectronic and structural properties of cubic phase RbSnX 3 (X = I, Br, Cl) perovskites (PVSKs). The DFT-computed band gap (E g ) of RbSnI 3 , RbSnBr 3 , and RbSnCl 3 were found to be 0.67, 1.28, and 1.53 eV, respectively, using the TB-mBJ exchange-correlation potential. The obtained E g of RbSnI 3 is very small, and is not suitable for solar cell (SC) applications. On the other hand, the E g values of RbSnBr 3 and RbSnCl 3 PVSKs are suitable for SC applications due to their closeness to the ideal E g of 1.45 eV, as predicted by the Shockley− Quiesser limit of theoretical efficiency. Therefore, we investigated the PV performance of RbSnBr 3 and RbSnCl 3 using SCAPS-1D software. The optical and electronic properties of cubic RbSnX 3 (X = Br, Cl) used as an absorber in PSCs extracted from DFT, have been used for the simulation. We varied the perovskite layer parameters to achieve the optimal performance for PSCs. We simulated RbSnX 3 (X = Br, Cl)-based PCS with several hole-transport layers (HTLs) and electron-transport layers (ETLs). Titanium dioxide (TiO 2 ) as the ETL and poly(triarylamine) (PTAA) as the HTL exhibited best performance among different combinations. The PSC structure fluorine-doped tin oxide (FTO)/TiO 2 /RbSnBr 3 /PTAA/Au delivered a PCE of 22.53%, J SC of 35.05 mA/cm 2 , V OC of 0.78 V, and FF of 73.06%, while FTO/TiO 2 /RbSnCl 3 /PTAA/Au exhibited a PCE of 22.64%, J SC of 26.63 mA/cm 2 , V OC of 1.08 V, and FF of 78.17%. The remarkable ability of RbSnX 3 (X = Br, Cl) PVSKs to capture photons efficiently and effectively can help in the development of PV and optoelectronic devices.

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Interface studies by simulation on methylammonium lead iodide based planar perovskite solar cells for high efficiency

Cited by 29 publications

References 43 publications

Performance analysis of WSe2-based bifacial solar cells with different electron transport and hole transport materials by SCAPS-1D

Performance analysis of WSe2-based bifacial solar cells with different electron transport and hole transport materials by SCAPS-1D

Influence of Electron Transport Layer (TiO2) Thickness and Its Doping Density on the Performance of CH3NH3PbI3-Based Planar Perovskite Solar Cells

Design Insights and Photovoltaic Performance Analysis of Non-Lead Inorganic RbSnX₃ (X = I, Br, Cl) Perovskites through Coupled Density Functional Theory and SCAPS-1D Simulation Frameworks

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Interface studies by simulation on methylammonium lead iodide based planar perovskite solar cells for high efficiency

Cited by 29 publications

References 43 publications

Performance analysis of WSe2-based bifacial solar cells with different electron transport and hole transport materials by SCAPS-1D

Performance analysis of WSe2-based bifacial solar cells with different electron transport and hole transport materials by SCAPS-1D

Influence of Electron Transport Layer (TiO2) Thickness and Its Doping Density on the Performance of CH3NH3PbI3-Based Planar Perovskite Solar Cells

Design Insights and Photovoltaic Performance Analysis of Non-Lead Inorganic RbSnX3 (X = I, Br, Cl) Perovskites through Coupled Density Functional Theory and SCAPS-1D Simulation Frameworks

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Design Insights and Photovoltaic Performance Analysis of Non-Lead Inorganic RbSnX₃ (X = I, Br, Cl) Perovskites through Coupled Density Functional Theory and SCAPS-1D Simulation Frameworks