Interface structure between epitaxial NiSi2 and Si

Liu, Weilong; Chen, W.J.; Tsai, Tsung-Che; Tsai, Hsun-Heng; Hsieh, Shu-Huei

doi:10.1016/s1005-8850(06)60113-8

Journal of University of Science and Technology Beijing, Minera

2006

DOI: 10.1016/s1005-8850(06)60113-8

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Interface structure between epitaxial NiSi2 and Si

Weilong Liu¹,

W.J. Chen²,

Tsung-Che Tsai³

et al.

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Cited by 2 publications

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“…NiSi 2 is known to have the best match with Si lattice among nickel silicides. 8) So if used in one dimensional silicon based devices, the heterostructure of Si and NiSi 2 NW system will have very low inner stress, which benefits the reliability of device. The high thermal stability and low resistivity of NiSi 2 also attracted both fundamental and practical interests.…”

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confidence: 99%

Preparation of NiSi₂Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Jiang

Xin

Chen

et al. 2009

Appl. Phys. Express

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Nickel silicide nanowires are promising interconnection and gate materials for one dimensional nanoelectronic devices. In this report, NiSi 2 nanowires with low resistivity of 23.5 cm were prepared by nickel sputtering on silicon nanowires and 550 C annealing. High resolution transmission microscopy, selective area electron diffraction and energy dispersive X-ray spectroscopy were used to characterize the structure and composition of NiSi 2 nanowires. Four-terminal electrical measurement was used to verify the electrical property of nanowires. A low energy implantation mechanism is introduced to explain the formation of silicon rich nickel silicide.

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mentioning

confidence: 99%

Preparation of NiSi₂Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Jiang

Xin

Chen

et al. 2009

Appl. Phys. Express

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“…7 It has been known that NiSi 2 nanowires are more desirable than other Ni silicide nanowires for potential applications because this crystal structure is stable at high temperature conditions and shows lower resistivity. In addition, NiSi 2 has the smallest lattice mismatch with cubic Si structure compared to other Ni silicides, 8 indicating that the interface stress in the nanowire heterostructure of NiSi 2 /Si should be very low. In this paper, we report in situ observation of the formation of single crystalline NiSi 2 silicide nanowires.…”

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confidence: 99%

Nanostructural Transformation and Formation of Heterojunctions from Si Nanowires

Wong

Cheng

et al. 2010

ACS Nano

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ecause of the importance of Si-based materials to the electronic industry, considerable effort has been devoted to studying Si and metal silicide nanowire structures. 1 Nickel silicides show low electrical resistivity and excellent thermal stability without the electron migration effect at high temperatures. They are promising candidates as the electrical contacts for Si nanowire devices because of their good compatibility with Si and small lattice mismatch at the interface. The conventional methods for fabricating Ni silicide nanowires are based on the phase transformation through annealing treatment of Ni-coated Si nanowires at temperatures higher than 550 °C in vacuum. 1 An excess of Ni coating is normally needed and has to be removed by chemical etching after reaction. The Ni silicide nanowires obtained by annealing treatment are usually polycrystalline. Ni silicide nanowires can be directly grown on the Ni thin films (10Ϫ100 nm thick) deposited on SiO 2 substrates using silane as the vapor-phase Si source. 2Ϫ4 The growth temperature is low (about 370 °C); however, the as-grown Ni silicide nanowires are polycrystalline and contain different phases.Lu et al. 5,6 demonstrated a novel method of point contact reaction to transform Si nanowires into single crystalline Ni silicide structures in an electron microscope. The Ni atoms could diffuse and interact with the Si nanowire to form a NiSi structure. The interface between the Si nanowire and the newly formed NiSi wire was atomic flat and epitaxial without any misfit dislocations. Beside NiSi/Si junctions, NiSi/Si/NiSi heterostructures were also synthesized using two Ni nanowires to touch one Si nanowire. 6 Ni displayed interesting behaviors when reacting with Si nanowires. For example, for the

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Interface structure between epitaxial NiSi2 and Si

Cited by 2 publications

References 12 publications

Preparation of NiSi₂Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Preparation of NiSi₂Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Nanostructural Transformation and Formation of Heterojunctions from Si Nanowires

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Interface structure between epitaxial NiSi2 and Si

Cited by 2 publications

References 12 publications

Preparation of NiSi2Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Preparation of NiSi2Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Nanostructural Transformation and Formation of Heterojunctions from Si Nanowires

Contact Info

Product

Resources

About

Preparation of NiSi₂Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires

Preparation of NiSi₂Nanowires with Low Resistivity by Reaction Between Ni Coating and Silicon Nanowires