Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces

Ledentsov, N. N.; Litvinov, D.; Rosenauer, A.; Gerthsen, D.; Soshnikov, I. P.; Shchukin, V. A.; Ustinov, V. M.; Egorov, A. Yu.; Zukov, A. E.; Володин, В. А.; Efremov, M. D.; Preobrazhenskii, V. V.; Semyagin, B.; Bimberg, D.; Alfërov, Zh. I.

doi:10.1007/s11664-001-0084-1

Cited by 30 publications

(13 citation statements)

References 30 publications

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“…This fact can be an indirect evidence of the quantum wire-like growth model [2]. And indeed, the cross section HREM data of(31 1)A SLs confirms this model, the modulation of GaAs and AlAs layers in (01-1) direction with period about 3.0 nm was observed [6].…”

supporting

confidence: 64%

Interface reconstruction in GaAs/AlAs ultrathin superlattices grown on (311) and (001) surfaces

Efremov

Володин

Sachkov³

et al. 2001

Nanotechnology

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Phonon spectra of GaAs/AlAs superlattices (SLs) grown on (311)A, B and (001) surfaces were studied using Raman spectroscopy. The thickness of GaAs layers were varied from 1 to 10 monolayers (MLs); the thickness of AlAs barriers were 8 ML in the (311) direction. Different polarization geometries of Raman scattering were applied to study LO and TO modes. The splitting of TOx (atoms displace in the direction [011̄] perpendicular to the facets on the (311)A surface) and TOy (atoms displace in the [2̄33] direction parallel to the facets) modes was observed for (311)A SLs. In the case of (311)B SLs no splitting was observed. The phonon anisotropy of (311)A SLs may be indirect evidence of anisotropic structure of quantum objects formed on the (311)A GaAs surface. In the Raman spectra of the SL containing GaAs submonolayers (SML) grown on a (2×4) reconstructed (100) surface, Raman peaks corresponding to additional lateral confinement of LO phonons were observed. The calculations of Raman spectra were carried out using the Born-von-Karman model (taking into account Coulomb interaction in the rigid-ion model) and the Wolkenstein bond polarizability model. According to the calculations, the interface structure strongly influences the Raman spectra of GaAs/AlAs heterostructures containing GaAs SML.

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supporting

confidence: 64%

Interface reconstruction in GaAs/AlAs ultrathin superlattices grown on (311) and (001) surfaces

Efremov

Володин

Sachkov³

et al. 2001

Nanotechnology

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“…Such a phenomenological TEM analysis may directly confirm whether dots have formed in the strain field of buried dots, the dot height may be proportional to the deposited material, QD dispersion varies with stacking number or is bimodal, strains varies with dot layer spacing, and QD composition is smooth or inhomogeneous, etc. (cf., e.g., applications in the systems GeSi [14][15][16], GeSiC [17], AIGaAs [18,19], InGaAs [20][21][22][23][24]' InAsP [25], CdZnSe [26][27][28], InGaN [29,30]' GalnP [31], Si-Si02 [32][33][34] and the examples shown in Sect. 3.3).…”

Section: Quantum Dots: Structural Investigationsmentioning

confidence: 99%

Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopy

Scheerschmidt¹,

Werner²

2002

Nano-Optoelectronics

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“…5 In 0.5 P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy.…”

mentioning

confidence: 99%

“…We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al 0.8 Ga 0.2 ) 0. 5 There exists a strong interest in heterostructures epitaxially grown on non-(100)-oriented substrates. Piezoelectric fields in strained heterostructures, 1,2 amphoteric nature of certain impurities in case of epitaxial growth on differently oriented substrates, 3 and the formation of spontaneously ordered nanofaceted surfaces 4-6 are among the most discussed topics in fundamental research and in device applications.…”

mentioning

confidence: 99%

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Ledentsov

Shchukin

Lyytikäinen

et al. 2014

Applied Physics Letters

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We report on green (550–560 nm) electroluminescence (EL) from (Al0.5Ga0.5)0.5In0.5P-(Al0.8Ga0.2)0.5In0.5P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (∼500 A/cm2), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (∼550 nm at room temperature). At high current densities (>1 kA/cm2), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4 kA/cm2, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14 kA/cm2. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al0.8Ga0.2)0.5In0.5P cladding layers.

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Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces

Cited by 30 publications

References 30 publications

Interface reconstruction in GaAs/AlAs ultrathin superlattices grown on (311) and (001) surfaces

Interface reconstruction in GaAs/AlAs ultrathin superlattices grown on (311) and (001) surfaces

Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopy

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

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