Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors

Shi, Frank F.; Chang, Kee‐Chul; Hsieh, K. C.; Guido, L. J.; Hoke, Bill

doi:10.1063/1.1633980

Cited by 14 publications

(13 citation statements)

References 9 publications

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“…For example, the formation of an amorphous layer and dangling bonds in some regions between the two crystals results in the weakly bonded interface areas. [21][22][23] This will reduce the overall interface adhesion. 23 For a nonideal or damaged interface, 24 the interfacial slip arises.…”

Section: Timoshenko's Modelmentioning

confidence: 99%

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Applicability range of Stoney’s formula and modified formulas for a film/substrate bilayer

Zhang

Zhao

2006

Journal of Applied Physics

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In addition to the layer thickness and effective Young's modulus, the impact of the kinematic assumptions, interfacial condition, in-plane force, boundary conditions, and structure dimensions on the curvature of a film/substrate bilayer is examined. Different models for the analysis of the bilayer curvature are compared. It is demonstrated in our model that the assumption of a uniform curvature is valid only if there is no in-plane force. The effects of boundary conditions and structure dimensions, which are not ͑fully͒ included in previous models are shown to be significant. Three different approaches for deriving the curvature of a film/substrate bilayer are presented, compared, and analyzed. A more comprehensive study of the conditions regarding the applicability of Stoney's formula and modified formulas is presented.

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Section: Timoshenko's Modelmentioning

confidence: 99%

“…[21][22][23] This will reduce the overall interface adhesion. 23 For a nonideal or damaged interface, 24 the interfacial slip arises. Both experiment and theoretical analyses show that the interfacial slip greatly influences the stress distribution inside the layer.…”

Section: Timoshenko's Modelmentioning

confidence: 99%

Applicability range of Stoney’s formula and modified formulas for a film/substrate bilayer

Zhang

Zhao

2006

Journal of Applied Physics

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“…The Al 0.22 Ga 0.78 As/AlAs/active region/AlAs/ layer sequence with a total thickness of b 1 + b 2 + b 3 + b 4 = 22.4 μm can be grown using molecular beam epitaxy (please see, e.g., [46] where an even more complicated active region was grown with this method). Then, the cup Al 0.22 Ga 0.78 As 53 μm thick layer can be mounted on the heterostructure top surface by bonding [47] to the latter an Al 0.22 Ga 0.78 As wafer and then wafer etching down to the required thickness 53 μm.…”

Section: Optimal Active Region and Waveguide Designmentioning

confidence: 99%

Ion-Irradiated Laterally Graded Ni/C Multilayers: A Combined X-ray Standing Wave and X-ray Reflectivity Analysis

Dev¹,

Roy²,

Bera³

et al. 2011

Jpn. J. Appl. Phys.

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An inversionless room temperature scheme for a far-infrared and THz laser with the possibility of the wide tuning of its working frequency is suggested. The scheme is based on usual room-temperature quantum cascade lasers operating in the mid-infrared range and the use of their output as a driving field for a supplementary semiconductor heterostructure where the inversionless lasing of the far-infrared or THz radiation takes place. This structure consists of a superlattice formed by quantum wells of a special design and is incorporated into a dielectric waveguide. The optimal parameters of this structure are calculated and its operation is simulated. As a result it is shown that the working frequency of such a device can be varied by more than two times via the simple change of the mid-infrared driving field intensity. Due to the high values of the latter the suggested inversionless laser is expected to operate in the pulsed mode. It can be used as a compact and convenient widely tunable source of the far-infrared and THz radiation for fundamental studies and various applications.

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“…The formation of amorphous layer and dangling bonds in some regions between the two phases also result in the weakly bonded interface areas. All these above will reduce the overall interface adhesion for sure [5]. Both experiment and theoretical analysis show that the analysis of rigid interface model errors more and more when the size of film-substrate composite shrinks in micron order [1,2].…”

Section: Introductionmentioning

confidence: 99%

Effect of Compliant Interface on the Curvature and Stress of Micron-Size Film-Substrate Composite Structure

Liu

Zhang

2006

2006 IEEE International Conference on Robotics and Biomimetics

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-The stress inside the film or substrate can be evaluated by the Stoney's formula and its modified/extended formula, which links the curvature to the stress state inside the composite. However, the Stoney's formula and its modified/extended formula assume the rigid interface, which allows no interfacial slip. The compliance of interface results in an interfacial slip, which can significantly affect the distribution of stress inside the film and substrate. The interface layer with the effect of interfacial slip plays the vital role of stress transfer between the film and substrate. The curvatures of film and substrate are shown to be different in general with the presence of interfacial slip and deviate significantly from that predicated by the models of rigid interface. This could be a serious error source when using the models of rigid interface to evaluate the stress inside the film or substrate, especially when the dimension of the composite is the order of several microns. A model which extends the application of Stoney's formula to the case of composite with interfacial slip is presented.

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Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors

Cited by 14 publications

References 9 publications

Applicability range of Stoney’s formula and modified formulas for a film/substrate bilayer

Applicability range of Stoney’s formula and modified formulas for a film/substrate bilayer

Ion-Irradiated Laterally Graded Ni/C Multilayers: A Combined X-ray Standing Wave and X-ray Reflectivity Analysis

Effect of Compliant Interface on the Curvature and Stress of Micron-Size Film-Substrate Composite Structure

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