Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell<sup>*</sup>

Xiao, Youpeng; Wei, Xiuqin; Zhou, Lang

doi:10.1088/1674-1056/26/4/048104

Cited by 4 publications

(1 citation statement)

References 33 publications

(31 reference statements)

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“…The current density and voltage decrease dramatically since the surface passivation deteriorates. [9,10] In order to achieve the favorable chemical passivation, the i-a-Si: H layer is required to be deposited between c-Si and a-Si: H. [11][12][13] However, because of the higher absorption coefficient of a-Si: H than that of Si, a-Si: H will significantly reduce the spectrum response, therefore leading to the decrease of J sc directly. [14,15] Besides, it is reported that each thickness increase by 10 nm can lead to the J sc decrease by 1.5 mA/cm 2 .…”

Section: Introductionmentioning

confidence: 99%

The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells*

et al. 2019

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Interdigitated back contact silicon hetero-junction (IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures. The front surface field (FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells. The electric field passivated layer n+-a-Si: H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ. It is indicated that the n+-a-Si: H layer with wider band gap can reduce the light absorption on the front side efficaciously, which hinders the surface recombination of photo-generated carriers and thus contributes to the improvement of the short circuit current density J sc. The highly doped n+-a-Si: H can result in the remakable energy band bending, which makes it outstanding in the field passivation, while it makes little contribution to the chemical passivation. It is noteworthy that when the electric field intensity exceeds 1.3 × 105 V/cm, the efficiency decrease caused by the inferior chemical passivation is only 0.16%. In this study, the IBC-SHJ solar cell with a front n+-a-Si: H field passivation layer is simulated, which shows the high efficiency of 26% in spite of the inferior chemical passivation on the front surface.

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Section: Introductionmentioning

confidence: 99%

The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells*

et al. 2019

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Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

Johnston,

Jordan,

Kern

et al. 2023

Solar Energy Materials and Solar Cells

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Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Bagade,

Patel

2023

Phys. Scr.

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Carrier selective solar cell has become one of the hot spots in the area of Si solar cell. The proposed architecture FTO/TiO2/c-Si/i-a-Si:H/Cu2O/back contact studied through simulation demonstrates a power conversion efficiency of 20.03%. This study is the first to report detailed exploration of effect of the conduction band density of states on the efficiency of Si solar cell. Through optimization, the conduction band density of state (1017 cm-3) drastically increases the power conversion efficiency from 18% (at 1021 cm-3) to 21.25% (at 1017 cm-3) i.e., an improvement of 18% relatively. Along with this, the parameters like absorber layer thickness, absorber’s defect density, thickness of electron transport layer and interface defect density are also optimized. Moreover, the charge transport properties and the impact of the Schottky barrier height at c-Si/TiO2 interface on band alignment is studied. After optimization of various physical parameters such as thickness (100 μm), conduction band density of states (1017 cm-3) and defect concentration (1010 cm−3) of c-Si layer, thickness of TiO2 layer (20 nm) and interface defect density at c-Si/TiO2 junction (1010 cm−2), a short-circuit current of 38.11 mA cm−2, open-circuit voltage of 0.84 V, fill factor of 85.99% is obtained, leading to an enhanced theoretical power conversion efficiency of 27.77%.

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Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell^*

Cited by 4 publications

References 33 publications

The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells*

The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells*

Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

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Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell*

Cited by 4 publications

References 33 publications

The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells*

The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells*

Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

Insight into conduction band density of states at c-Si/TiO2 interface for efficient heterojunction solar cell

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Product

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About

Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell^*

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell