Abstract:Interdigitated back contact silicon hetero-junction (IBC-SHJ) solar cells exhibit excellent performance owing to the IBC and SHJ structures. The front surface field (FSF) layer composed of electric field passivation and chemical passivation has been proved to play an important role in IBC-SHJ solar cells. The electric field passivated layer n+-a-Si: H, an n-type Si alloy with carbon or oxygen in amorphous phase, is simulated in this study to investigate its effect on IBC-SHJ. It is indicated that the n+-a-Si: … Show more
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