Interface states on semiconductor/insulator surfaces

Goetzberger, A.; Klausmann, E.; Schulz, M.

doi:10.1080/10408437608243548

Cited by 183 publications

(44 citation statements)

References 103 publications

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“…6 the effective trap density can be calculated: These trap densities are an order of magnitude larger than the trap densities obtained for the (100) n-channel MOSFET's at T--4.2 K if the 1/f-noise of the latter is interpreted as number fluctuations noise. This is in agreement with measurements of the trap density by other techniques in which generally higher values are found for the (111) orientation [18,19,20,21]. Difference in processing techniques can also lead to different trap densities [22].…”

Section: Then It Follows That [15]supporting

confidence: 81%

Current noise in (111) n-channel Si-MOSFET's at T = 4.2 K

1988

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We have investigated the drain current-drain voltage characteristics and the spectral noise intensity of the drain current of (111) n-channel MOSFET's at T= 4.2K. At T = 4.2K the drain current-drain voltage characteristics showed a hysteresis which was not observed at T = 77 K and at room temperature. A qualitative explanation of this hysteresis is given in terms of electron transfer from high mobility valleys to low mobility valleys due to hot electrons. In the spectra of the current noise three contributions could be distinguished: 1/f-noise, white noise and generation-recombination noise.

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Section: Then It Follows That [15]supporting

confidence: 81%

Current noise in (111) n-channel Si-MOSFET's at T = 4.2 K

1988

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“…It should be noted that the maximum concentration of the interface states is observed around E t = E V +0.20 eV and, in dependence on orientation of Si wafer, around E V +0.40 eV for Si (100) and E V +0.30 eV for Si (111). The surface traps with such energy distribution were observed in the SiO 2 /Si interface [18,19], and the maximum concentration at E V +0.40 eV was associated with a mixture of P b0 and P b1 centers and that at E V +0.30 eV -with P b0 centers [20]. Energy distributions of these centers taken from [20] are also depicted in Fig.…”

Section: Resultsmentioning

confidence: 81%

Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements

Gomeniuk¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Capacitance-voltage ( C-V ) and conductance-frequency () techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high for Al-HfO 2 -Si, Pt-Gd 2 O 3 -Si and Pt-LaLuO 3 -Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor.

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“…In this derivation it is assumed that the capture cross SBCtions for electrons and holes are energy independent, wlich is probably not correct [23]. However, around the middh: of the energy gap these capture cross sections are almost energy independent, and therefore the obtained energy dependenco of Dit is reliable in this region.…”

Section: Determination Of Interface State Distributionmentioning

confidence: 90%

“…Changing the 'duty cycle 01 of the triangular pulses from 0.5 to 0.15 (which means applying sawtooth pulses), yields' the result expected from the theory (20). By showing the recombined charge per cycle, which is given by (23) and allows the determination of the mean valua of the surfacestate density without the need for any Other parameter than the temperature and the gate area. In Fig.…”

Section: A Dependence On the Pulse Shapementioning

confidence: 99%