Interface states in SiSiO2 interfaces

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements

“…In fact, studies that used Nicollian and Goetzberger's conductance method in the Si/SiO 2 system show that r p;n is largely energy independent in the mid-gap region, while it decreases rapidly at band edges. [53][54][55] These parametrisations are used as a first approximation to understand how S ef f is affected by different energy dependencies in S n;p . Figure 4 illustrates the influence of Equation (10) on Equation (4) for typical reported values of the parameters.…”

“…36 However, previous reports have shown that it is a reasonable assumption to consider the valence band tail of donor-type, and the conduction band tail of acceptortype states. 54,[57][58][59][60] The effect of D itq0 on S ef f is first explored in Figure 5 (blue and orange curves), by assuming…”

The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics

“…Therefore, these possible sources of error must be taken into account. The series resistance is an important parameter, which causes the electrical characteristics of MIS Schottky diodes to be non-ideal [18][19][20][21].…”

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

“…Due to the presence of oxide layer and two surface-charge regions, MOS physics is more complicated than semiconductor surface physics. The importance in Si technology, the semiconductor/ insulator (Si/SiO 2 ) interface and defects on its neighborhood have been extensively studied in the past four decades [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”