Interface states at semiconductor junctions

Margaritondo, G.

doi:10.1088/0034-4885/62/5/203

Cited by 50 publications

(33 citation statements)

References 180 publications

(266 reference statements)

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“…XPS has previously been used to study the surface electronic properties of a wide range of semiconductors. 6 While clean surfaces of both GaN and InN have previously been obtained outside the growth chamber, 7,8 surface preparation remains very difficult and would require a different method to be optimized for each In x Ga 1−x N composition. Consequently, the composition dependence of the surface Fermi-level pinning has been studied in the presence of the native oxide on the In x Ga 1−x N͑0001͒ surfaces.…”

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confidence: 99%

Transition from electron accumulation to depletion at InGaN surfaces

Veal

Jefferson

Piper

et al. 2006

Applied Physics Letters

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The composition dependence of the Fermi-level pinning at the oxidized ͑0001͒ surfaces of n-type In x Ga 1−x N films ͑0 ഛ x ഛ 1͒ is investigated using x-ray photoemission spectroscopy. The surface Fermi-level position varies from high above the conduction band minimum ͑CBM͒ at InN surfaces to significantly below the CBM at GaN surfaces, with the transition from electron accumulation to depletion occurring at approximately x = 0.3. The results are consistent with the composition dependence of the band edges with respect to the charge neutrality level.

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confidence: 99%

Transition from electron accumulation to depletion at InGaN surfaces

Veal

Jefferson

Piper

et al. 2006

Applied Physics Letters

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“…Many models have been developed to understand the origins and behaviors of potential barriers at the interfaces of MS contacts. Significant efforts are being made to arrive at a more realistic interpretation of characterizing parameters of real Schottky diodes (Margaritondo, 1999;Mathai et al, 2010). Until now, the current-voltage (I-V) measurement method has been used widely to explore the trap states in the Schottky diode by evaluating the diode ideality factor (Jang et al, 2005).…”

Section: Introductionmentioning

confidence: 99%

Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures

Hattami¹,

Rathod²,

Kadash³

et al. 2013

IJTech

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Cadmium sulphide (CdS), a member of group II-VI semiconductors, is a promising material based on its applications. The present investigations describe the preparation and electrical characterization of CdS thin films. CdS thin films with thickness of 1000 nm were deposited by vacuum evaporation at room temperature. Characteristic parameters of Schottky junctions formed by a thermal vapor deposition of 500 nm of Al films on pre-coated CdS glass substrates were obtained experimentally from the I-V characteristics in the temperature range of 303-393 K. Diode parameters, such as the zero-bias barrier height φ b0 , flat band barrier height Φ bf , ideality factor η, and series resistance R S were investigated using the thermionic emission method.

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“…Metal/Semiconductor (MS) contacts have been the focus of extensive theoretical and experimental studies for several decades [2][3][4]. Considerable work has been carried out on the mechanisms of metal schottky barriers on bulk semiconductors [5][6][7][8][9][10][11][12], but relatively little has been reported on metal-semiconductor interfaces in thin film form [13][14][15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%