Interface shape studies for silicon ribbon growth by the EFG technique

Stress studies in EFG. Quarterly progress report, April 1-June 30, 1984

“…This sensitivity analysis illustrates that T is the 0 controlling variable for producing a fit of the model results to the experimental data and that fluctuation~ in die top temperature are primarily responsible for sheet nonuniformity. This conclusion waspreviously also reached in the analysis of asymmetric die EFG[11].…”

Radial segregation induced by natural convection and melt/solid interface shape in vertical bridgman growth

“…16) have demonstrated that significant radial segregation occurs in systems without convection tangent to the crystal surface when the radius of curvature of this interface is the same or less than the length scale of the concentration gradient adjacent to the interface. Curvaturt-induced segrecation has been shown to be an important contribution to dopant inhomogeneities in capillary growth systems [17][18][19] and may be important in other small-scale crystal growth experiments in which convection in the melt has been suppressed.…”

Meniscus dynamics and melt solidification in the EFG silicon tube growth process

“…The process is primarily dependent of the meniscus that is formed between the die and seed. During years, a number of EFG growth models have been developed to identify the operating conditions under which a stable ribbon growth is feasible [2][3][4][5]. The critical conditions for die geometry, pull rate and thermal environment were identified based on the linear perturbation analysis under the steady state condition [6][7].…”