Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy

Zheng, Jiangtao; Walker, J.; Salmerón, M.; Weber, E. R.

doi:10.1103/physrevlett.72.2414

Cited by 127 publications

(55 citation statements)

References 16 publications

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“…For indium, typically, a bright contrast is observed in empty-state imaging conditions [20,[26][27][28], and for filled-state imaging at low indium concentrations there appears to be no indium contribution to the image [20]. This agrees with our simulations, which also show a bright contrast in the emptystate imaging and no indium contrast in the filled-state images.…”

Section: Group-iii Stm Imagessupporting

confidence: 89%

Scanning tunneling microscopy contrast of isovalent impurities on the GaAs (110) surface explained with a geometrical model

et al. 2016

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Section: Group-iii Stm Imagessupporting

confidence: 89%

Scanning tunneling microscopy contrast of isovalent impurities on the GaAs (110) surface explained with a geometrical model

et al. 2016

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“…One of the most successful techniques for such an atomistic characterization is cross-sectional scanning tunneling microscopy ͑XSTM͒, which provided excellent geometric and electronic data of semiconductor heterostructures. [1][2][3][4][5][6][7][8] Scanning tunneling microscopy can, however, only be applied on electrically conducting materials. So far bulk ''materials with insufficient conductivity at room temperature'' 9 could only be imaged with additional carrier generation at elevated temperatures or by light illumination.…”

Section: Introductionmentioning

confidence: 99%

Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs

et al. 2002

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We report on atomically resolved scanning tunneling microscopy images and tunneling spectra of ͑110͒ cleavage surfaces of semi-insulating GaAs without illumination at room temperature. With help of simple model calculations we extract the physical mechanisms involved in the tunneling processes from and into semi-insulating GaAs. Atomically resolved images can only be observed at negative voltages, while no tunneling into empty states is possible without illumination. This is explained, on the one hand, by the absence of a carrier inversion at the semiconductor surface without illumination under the nonequilibrium tunneling contact conditions. On the other hand, at negative voltages in the noncontact mode an accumulation at the surface occurs and leads to tunneling of electron from the valence band states into the empty tip states. This current is limited by the tunneling through the vacuum barrier and the scanning tunneling microscopy images are found to show the occupied dangling bond states above the arsenic atoms. In the point contact mode the current is limited by tunneling through the space charge region without and with illumination. The implications of the results for the investigation of low-conductivity materials by scanning tunneling microscopy are discussed.

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“…Rosenauer et al [11,12], cross-section scanning tunneling microscopy studies [13][14][15] or secondary mass ion spectroscopy [5]. These ex-situ techniques are complementary to in-situ surface techniques which yield x s but not the final bulk concentration profiles.…”

Section: Introductionmentioning

confidence: 99%

Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation inInxGa1−xAs

et al. 2006

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Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy

Cited by 127 publications

References 16 publications

Scanning tunneling microscopy contrast of isovalent impurities on the GaAs (110) surface explained with a geometrical model

Scanning tunneling microscopy contrast of isovalent impurities on the GaAs (110) surface explained with a geometrical model

Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs

Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation inInxGa1−xAs

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