Interface-reaction-limited growth of thermal oxides on 4H-SiC (0001) in nanometer-thick region

Kikuchi, Richard Heihachiro; Kita, Koji

doi:10.1063/1.4864284

Cited by 35 publications

(19 citation statements)

References 24 publications

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“…Such very rapid growth was also observed on other investigations. 25 This very rapid TABLE I. Comparison between parameters of X-ray reflectivity (XRR) measurements performed in this investigation (see Fig.…”

Section: Resultsmentioning

confidence: 91%

Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation

Dartora

Pitthan

Stedile

2017

Journal of Applied Physics

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Aiming to understand the processes involved in the formation of the transition region between SiO 2 and SiC, known as the interfacial region, early steps of SiC oxidation were investigated using mainly nuclear reaction analyses. Oxidation kinetics reveals that an abrupt change in the oxidation mechanism is observed in C-face oxide films when their thickness is around 10 nm, while a continuous change in the oxidation mechanism is observed in Si-face oxide films with thicknesses up to about 4 nm. This last thickness corresponds to the maximum width of the interfacial region. Changes observed in the oxidation mechanism were related to oxidation reaction and interfacial atom emission that may take place during oxide film growth. Besides, the activation energies of such processes were obtained.

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Section: Resultsmentioning

confidence: 91%

Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation

Dartora

Pitthan

Stedile

2017

Journal of Applied Physics

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“…Those wafers were cleaned and dipped into diluted hydrogen fluoride (HF) solution before being oxidized in a pure 1 atm O 2 atmosphere (dry O 2 ) to grow 3 to 30 nm thick SiO 2 layers. The thicknesses of the asoxidized SiO 2 layers (denoted as T SiO 2 ) were controlled by tuning the oxidation temperature and duration according to the kinetics of the SiO 2 growth on SiC in dry O 2 , 23) which was confirmed by the grazing incidence X-ray reflectivity after oxidation. Next, some of the samples were annealed in one of three kinds of ambient atmospheres: N 2 , N 2 /0.01% O 2 (denoted as N 2 /O 2 ) and N 2 /0.3% H 2 (denoted as N 2 /H 2 ) atmospheres under 1 atm at 1450 °C for various durations.…”

Section: Methodsmentioning

confidence: 99%

Considerations on the kinetic correlation between SiC nitridation and etching at the 4H-SiC(0001)/SiO₂ interface in N₂ and N₂/H₂ annealing

Yang

Kita

2022

Jpn. J. Appl. Phys.

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Kinetics of SiC surface nitridation process of high-temperature N2 annealing was investigated with 4H-SiC(0001)/SiO2 structure based on the correlation between the rates of N incorporation and SiC consumption induced by SiC etching. During the early stage of the annealing process, the rate-limiting step for N incorporation would be the removal of the topmost C atoms in the slow-etching case, while it would be another reaction step, probably the activation process of nitrogen in the fast-etching case. The SiO2 layer thickness and the annealing ambient which serve as the parameters to affect the SiC etching rate, would determine the N incorporation rate according to the kinetic correlation between the N incorporation and SiC etching. The SiC consumption observed during high-temperature annealing in N2 or N2/H2 ambient would be induced by the active oxidation by residual O2 or H2O in the ambient, which would lead to the SiC surface roughening.

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“…films growth on 4H-SiC by the dry oxidation. [27] In the modified Deal-Grove model of 4H-SiC, growth follows the following equation: [27,45,46]…”

Section: Element Binding State Of Sic/sio 2 Interfacementioning

confidence: 99%

Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

et al. 2022

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We investigated the effect of ozone (O3) oxidation of silicon carbide (SiC) on the flat-band voltage (V fb ) stability of SiC metal-oxide-semiconductor (MOS) capacitors. SiC MOS capacitors were produced by O3 oxidation, and their V fb stability under frequency variation, temperature variation and bias temperature stress was evaluated. Secondary ion mass spectroscopy (SIMS), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) indicated that O3 oxidation can adjust the element distribution near SiC/SiO2 interface, improve SiC/SiO2 interface morphology and inhibit the formation of near-interface defects, respectively. In addition, we elaborated the underlying mechanism through which O3 oxidation improves the V fb stability of SiC MOS capacitors by using the measurement results and O3 oxidation kinetics.

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Interface-reaction-limited growth of thermal oxides on 4H-SiC (0001) in nanometer-thick region

Cited by 35 publications

References 24 publications

Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation

Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation

Considerations on the kinetic correlation between SiC nitridation and etching at the 4H-SiC(0001)/SiO₂ interface in N₂ and N₂/H₂ annealing

Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

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Interface-reaction-limited growth of thermal oxides on 4H-SiC (0001) in nanometer-thick region

Cited by 35 publications

References 24 publications

Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation

Unraveling the mechanisms responsible for the interfacial region formation in 4H-SiC dry thermal oxidation

Considerations on the kinetic correlation between SiC nitridation and etching at the 4H-SiC(0001)/SiO2 interface in N2 and N2/H2 annealing

Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors

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Considerations on the kinetic correlation between SiC nitridation and etching at the 4H-SiC(0001)/SiO₂ interface in N₂ and N₂/H₂ annealing