Considerations on the kinetic correlation between SiC nitridation and etching at the 4H-SiC(0001)/SiO₂ interface in N₂ and N₂/H₂ annealing

Abstract

Kinetics of SiC surface nitridation process of high-temperature N2 annealing was investigated with 4H-SiC(0001)/SiO2 structure based on the correlation between the rates of N incorporation and SiC consumption induced by SiC etching. During the early stage of the annealing process, the rate-limiting step for N incorporation would be the removal of the topmost C atoms in the slow-etching case, while it would be another reaction step, probably the activation process of nitrogen in the fast-etching case. The SiO2 layer thickness and the annealing ambient which serve as the parameters to affect the SiC etching rate, would determine the N incorporation rate according to the kinetic correlation between the N incorporation and SiC etching. The SiC consumption observed during high-temperature annealing in N2 or N2/H2 ambient would be induced by the active oxidation by residual O2 or H2O in the ambient, which would lead to the SiC surface roughening.

Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

“…However, it is still unclear whether these reactions really occur during the NO-POA. Although the kinetics of the nitridation process on SiC surface during high-temperature N 2 annealing has been recently investigated on the basis of X-ray photoelectron spectroscopy, 13) the knowledge of energy barriers and reaction pathways, which are necessary to discuss the feasibility of reactions, are still lacking.…”