Interface Properties and Capacitance–Voltage Behaviour of Diamond Devices Prepared by Microwave-Assisted CVD

Alternating-current and direct-current electrical transport properties of diamond diodes with diamond surfaces of the different morphology

“…Investigation of the I-V characteristics revealed that the diode with a rectifying contact on the nucleation surface had better diode properties and lower conductivity. In the present study, complementary comparative studies of the alternating current (ac) and direct current (dc) conductance for the two different devices confirm our previous results [2] regarding charge transport. The impedance was measured and plotted in Cole-Cole representation for the growth surface and nucleation surface.…”

“…One sample (designated S1) was prepared by depositing a rectifying aluminium (Al) contact on the diamond growth surface and the other (designated S2) by depositing a rectifying Al contact on the nucleation surface. As previously reported [2], the electrical properties of the devices are influenced by the surface morphology and microstructure. Investigation of the I-V characteristics revealed that the diode with a rectifying contact on the nucleation surface had better diode properties and lower conductivity.…”

“…The contact on the growth surface (rough surface) had lower resistance than the contact on the nucleation surface (flat surface) and this dissimilarity in resistance was responsible for the very small rectification. This observation prompted our first study of devices with rectifying Al contacts on diamond with two different surfaces [2]. To analyse the electrical transport mechanism in more detail and to complement the previous study, the dc and ac conductance of these devices was investigated in the present study.…”

“…The I-V curves were derivative [2] to determine the dc conductance ( dc ) as a function of the applied voltage for devices S1 and S2. Figures 1 and 2 compare these results with the ac conductance ( ac ) as a function of the applied voltage, which was measured experimentally at a test frequency of 200 Hz at ambient temperature for each device.…”

Deep traps influence in polycrystalline diamond electrical transport charge

“…The importance of these interfacial states in diamond Schottky devices is not widely studied. Some works focuses the influence of the diamond surface on the devices electrical properties, suggesting the formation of interfacial layers [5] but, at moment, this remains an open question. The hydrogen termination of the diamond creates a high polarity surface, which is very sensitive to the operating conditions and induces a p-type high-conductivity layer, immediately below the surface (as deep as 50 nm) [6].…”