Analysis of the current-transport mechanism across a CVD diamond/silicon interface

Alternating‐current conductance and capacitance of a diamond diode in the presence of deep‐level impurities

“…An ideal equivalent circuit was proposed to describe the essential characteristics of the diode admittance. Mott-Schottky plot showed that the doping of the CVD diamond was not uniform and there is dispersion in admittance, indicating the presence of deep-level impurities [5]. The AC characteristic of the Schottky diode was simulated using an equivalent circuit similar to the circuit reported in Ref.…”

“…The AC characteristic of the Schottky diode was simulated using an equivalent circuit similar to the circuit reported in Ref. [5] but incorporating the effect of deeplevel impurities. Figure 1 shows a schematic of the seriesparallel network model proposed to interpret experimental data for the temperature range 230-270 K. The indices α=1, 2 represent the circuits for diamond grains and grain boundary regions, respectively.…”

“…Fig. 3 shows curve-fitting of the loss tangent plot to T=239 K. Previous experimental studies of the electrical conductivity of CVD diamond film demonstrated that the majority of the carrier flow occurs in grain boundary regions and that carrier transport in diamond microcrystals is relatively low [5]. Fig 4 shows an Arrhenius plot of the position of the peaks in the loss tangent curve for two different activation energies corresponding to these two processes.…”

“…As reported in previous studies [4,7], the AC temperature-dependent properties can be described by a simple model consisting of two parallel circuits, in which one circuit represents the microcrystal properties and the other the grain boundary properties, and comprises the resistances and capacitances corresponding to depletion regions and the bulk. In the present study, a similar model was proposed for analysis of results for the 2 Experimental The experimental procedures have previously been reported in more detail [5,6,8]. Using microwave plasma-assisted chemical vapour deposition, diamond films of 4-6 μm in thickness were grown on an ntype silicon substrate with a bulk resistivity of approximately 0.1 Ω.…”

“…The interface presents two parallel structures with distinct phases: microcrystals and grain boundaries [4][5][6]. As reported in previous studies [4,7], the AC temperature-dependent properties can be described by a simple model consisting of two parallel circuits, in which one circuit represents the microcrystal properties and the other the grain boundary properties, and comprises the resistances and capacitances corresponding to depletion regions and the bulk.…”